Lead Chalcogenide Films Grown by Pulsed Laser Deposition

被引：0

作者：

Virt, I. S. ^{[1
,2
]}

Tur, Y. ^{[1
]}

Potera, P. ^{[2
]}

Virt, I. S. ^{[1
,2
]}

Lusakowska, E. ^{[3
]}

Luka, G. ^{[3
]}

机构：

[1] Drogobych State Pedag Univ, Drogobych, Ukraine

[2] Univ Rzeszow, Rzeszow, Poland

[3] Inst Phys PAS, Warsaw, Poland

来源：

PROCEEDINGS OF THE 2017 IEEE 7TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2017年

关键词：

chalcogenide films; surface roughness; power spectral density analysis; pulsed lased deposition;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition. The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis.

引用

页数：3

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