This paper addresses the problem of hardware tasks reliability estimation in harsh environments. A novel statistical model is presented to estimate the reliability, the mean time to failure, and the number of errors of hardware tasks running on static random-access memory (SRAM)-based partially run-time reconfigurable field programmable gate arrays (FPGAs) in harsh environments by taking both single-bit upsets and multiple-cell upsets into account. The model requires some features of the hardware tasks, including their computation time, size, the percent of critical bits, and the soft error rates of k-bit events (k >= 1) of the environment for the reliability estimation. Such an early estimation helps the developers to assess the reliability of their designs at earlier stages and leads to reduce the development cost. The proposed model has been evaluated by conducting several experiments on actual hardware tasks over different environmental soft error rates. The obtained results, endorsed by the 95% confidence interval, reveal the high accuracy of the proposed model. When comparing this approach with a reliability model (developed by the authors in a previous work) that does not consider the occurrence of multiple-cell upsets, an overestimation of the mean time to failure of 2.88X is observable in the latter. This points to the importance of taking into account multiple events, especially in modern technologies where the miniaturization is high.
机构:
Univ Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, SpainUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Fabero, Juan Carlos
Mecha, Hortensia
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Univ Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, SpainUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Mecha, Hortensia
Franco, Francisco J.
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Univ Complutense Madrid UCM, EMFTEL Dept, Madrid 28040, Spain
Univ Complutense Madrid UCM, Inst Particle & Cosmos Phys IPARCOS, Fac Fis, Madrid 28040, SpainUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Franco, Francisco J.
Clemente, Juan Antonio
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Univ Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, SpainUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Clemente, Juan Antonio
Korkian, Golnaz
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Univ Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, SpainUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Korkian, Golnaz
Rey, Solenne
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Univ Grenoble Alpes, Lab Phys Subat & Cosmol LPSC, F-38000 Grenoble, France
IN2P3, CNRS, F-38000 Grenoble, FranceUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Rey, Solenne
Cheymol, Benjamin
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Univ Grenoble Alpes, Lab Phys Subat & Cosmol LPSC, F-38000 Grenoble, France
IN2P3, CNRS, F-38000 Grenoble, FranceUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Cheymol, Benjamin
Baylac, Maud
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Univ Grenoble Alpes, Lab Phys Subat & Cosmol LPSC, F-38000 Grenoble, France
IN2P3, CNRS, F-38000 Grenoble, FranceUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Baylac, Maud
Hubert, Guillaume
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ONERA French Aerosp Lab, F-31000 Toulouse, FranceUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
Hubert, Guillaume
Velazco, Raoul
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Univ Grenoble Alpes, F-38000 Grenoble, France
CNRS, TIMA, F-38000 Grenoble, FranceUniv Complutense Madrid UCM, Fac Informat, Comp Architecture Dept, Madrid 28040, Spain
机构:
Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Zheng, Qiwen
Cui, Jiangwei
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Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Cui, Jiangwei
Lu, Wu
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Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Lu, Wu
Guo, Hongxia
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Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Guo, Hongxia
Liu, Jie
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Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Liu, Jie
Yu, Xuefeng
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Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Yu, Xuefeng
Wang, Liang
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Beijing Microelect Technol Inst, Beijing 100076, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Wang, Liang
Liu, Jiaqi
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Beijing Microelect Technol Inst, Beijing 100076, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Liu, Jiaqi
He, Chengfa
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Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
He, Chengfa
Ren, Diyuan
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Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Ren, Diyuan
Yue, Suge
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Beijing Microelect Technol Inst, Beijing 100076, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Yue, Suge
Zhao, Yuanfu
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Beijing Microelect Technol Inst, Beijing 100076, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
Zhao, Yuanfu
Guo, Qi
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Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R ChinaChinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
机构:
Univ Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, BrazilUniv Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, Brazil
dos Santos, Andre Flores
Tambara, Lucas Antunes
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Univ Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, BrazilUniv Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, Brazil
Tambara, Lucas Antunes
Benevenuti, Fabio
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Univ Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, BrazilUniv Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, Brazil
Benevenuti, Fabio
Tonfat, Jorge
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Univ Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, BrazilUniv Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, Brazil
Tonfat, Jorge
Kastensmidt, Fernanda Lima
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Univ Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, BrazilUniv Fed Rio Grande do Sul, Inst Informat, PGMICRO, Porto Alegre, RS, Brazil