A study of vertical lithography for high-density 3D structures

被引：6

作者：

Hirai, Shin-Ichiro ^{[1
]}

Saito, Nobuyuki ^{[1
]}

Goto, Yoshio ^{[1
]}

Suda, Hiromi ^{[1
]}

Mori, Ken-Ichiro ^{[1
]}

Miura, Seiya ^{[1
]}

机构：

[1] Canon Inc, Utsunomiya, Tochigi 3213292, Japan

来源：

OPTICAL MICROLITHOGRAPHY XXV, PTS 1AND 2 | 2012年 / 8326卷

关键词：

More than Moore; TSV; back-side alignment; plating; wafer edge shielding; wafer edge exposure; bonded wafer;

D O I：

10.1117/12.917877

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

3D stacking technology using TSVs, as well as linewidth shrinking, is crucial for future progress in semiconductor devices. A new i-line exposure tool, the FPA-5510iV, has been developed which provides the functions necessary for implementing TSV processes. This paper reports on Canon's commitment to make advanced TSV processes a reality.

引用

页数：9

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