Synthesis and Magnetic Properties of Mn4Si7 and Si-Mn4Si7 Axial Heterostructure Nanowire Arrays

被引:13
|
作者
Liu, Hailong [1 ,2 ]
She, Guangwei [1 ]
Huang, Xing [1 ,2 ]
Qi, Xiaopeng [1 ,2 ]
Mu, Lixuan [1 ]
Meng, Xiangmin [1 ]
Shi, Wensheng [1 ]
机构
[1] Chinese Acad Sci, Key Lab Photochem Convers & Optoelect Mat, Tech Inst Phys & Chem, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 05期
关键词
ROOM-TEMPERATURE FERROMAGNETISM; MANGANESE-SILICIDE; GROWTH; FILMS; MNSI; SI(111); GE;
D O I
10.1021/jp310700r
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Manganese suicides nanostructures showed great potential applications in microelectronic and optoelectronic devices. In this study, Mn4Si7 and Si Mn4Si7 axial heterostructure nanowire arrays were synthesized by the in-situ reaction between Si nanowire arrays and MnCl2. Depending on the reaction durations and processes, structures (Mn4Si7 nanowires or Si-Mn4Si7 axial heterostructure nanowires) and lengths of the Mn4Si7 nanowires could be readily tuned. Phase identification were performed by the XRD, TEM, HRTEM, and SAED means, which results indicated that the assynthesized nanowire is Nowotny chimney ladder (NCL) structure Mn4Si7 with a tetragonal structure. The Mn4Si7 nanowire arrays exhibited enhanced ferromagnetism comparing with other bulk higher manganese silicides. The Curie temperature of the Mn4Si7 nanowire arrays is over 300 K, which is much higher than that of the previous reports. Because of the good compatibility with Si-based nanowire devices and many favorable properties, these Mn4Si7 nanowire arrays have wide potential applications in the Si-based self-assembly nanowire devices.
引用
收藏
页码:2377 / 2381
页数:5
相关论文
共 50 条
  • [41] Structural and thermoelectric properties of Mn15Si26, Mn4Si7 and MnSi2, synthesized using arc-melting method
    Sushmitha P. Rao
    Ajay Kumar Saw
    Chanderbhan Chotia
    Gunadhor Okram
    Vijaylakshmi Dayal
    Applied Physics A, 2021, 127
  • [42] Structural and thermoelectric properties of Mn15Si26, Mn4Si7 and MnSi2, synthesized using arc-melting method
    Rao, Sushmitha P.
    Saw, Ajay Kumar
    Chotia, Chanderbhan
    Okram, Gunadhor
    Dayal, Vijaylakshmi
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (08):
  • [43] Ultrahigh vacuum deposition of higher manganese silicide Mn4Si7 thin films
    Dulal, Rajendra P.
    Dahal, Bishnu R.
    Pegg, Ian L.
    Philip, John
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (06):
  • [44] The Effects of Sintering Conditions and Processes on the Thermoelectric and Tribological Properties of High Manganese Silicide Mn4Si7
    Li, Liang
    Chen, Yuqi
    IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, 2023, 18 (09) : 1398 - 1407
  • [45] High-performance Si-Mn/C composite anodes with integrating inactive Mn4Si7 alloy for lithium-ion batteries
    Deng, Li
    Wu, Zhan-Yu
    Yin, Zu-Wei
    Lu, Yan-Qiu
    Huang, Zhi-Gen
    You, Jin-Hai
    Li, Jun-Tao
    Huang, Ling
    Sun, Shi-Gang
    ELECTROCHIMICA ACTA, 2018, 260 : 830 - 837
  • [46] Epitaxial Growth of a Mn4Si7 Film on Monocrystalline Silicon Under an Influence of a Sb Surfactant
    Makogon, Yu M.
    Pavlova, O. P.
    Sidorenko, S. I.
    Beddis, G.
    Magilatenko, A. V.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2008, 30 (10): : 1383 - 1393
  • [47] 锰硅化合物Mn4Si7能带结构的研究
    张民
    季诚响
    韩荣生
    王志敏
    装甲兵工程学院学报, 2006, (03) : 84 - 89
  • [48] As、Ga掺杂对Mn4Si7电子结构和光学特性的影响
    朱挥
    陈茜
    罗玉玺
    电子元件与材料, 2022, 41 (04) : 369 - 375
  • [49] 硅基外延Mn4Si7薄膜电子结构与光学性质研究
    刘怿辉
    谢泉
    陈茜
    材料导报, 2014, 28 (08) : 9 - 12
  • [50] Transmission electron microscopy characterization of precipitate/matrix interfaces in doped Mn4Si7 thermoelectric crystal
    Orekhov, Andrey
    Suvorova, Elena
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2015, 71 : S73 - S73