Numerical Evaluation of Growth Conditions of GaN-based LEDs in Multiwafer MOCVD Reactor

被引：0

作者：

Yang, Liaoqiao ^{[1
]}

Zhang, Jianhua ^{[2
]}

Hu, Jianzheng ^{[3
]}

机构：

[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai, Peoples R China

[2] Shanghai Univ, Sch Mechatron & Automat, Shanghai, Peoples R China

[3] Rainbow Optoelect Mat Shanghai Co LTD, Shanghai, Peoples R China

来源：

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年

关键词：

Numerical simulation; MOCVD; CFD; LED;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a novel super large metal organic chemical vapor deposition (MOCVD) reactor with three inlets located on the periphery of reactor was proposed and numerical evaluation of growth conditions for GaN thin film was characterized. In this design, the converging effects of gas flow in the radial direction could counterbalance the dissipation of metal oxide source. The growth of GaN films using TMGa as a precursor, hydrogen as carrier gas was investigated. For the mathematical solution of the fluid flow, temperature and concentration fields, the commercialized computational fluid dynamics (CFD) based solver-Ansys-FLUENT was utilized. A 2-D model utilizing axisymmetric mode to simulate the gas flow in a MOCVD has been developed. The effects of the temperature, mass fraction, and the total flow of carrier gas on the flow field, temperature field, and species distribution were analyzed and discussed. The numerical simulation results shows all the fields distribution were in an acceptable range.

引用

页码：655 / 658

页数：4

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