Numerical Evaluation of Growth Conditions of GaN-based LEDs in Multiwafer MOCVD Reactor

被引：0
|
作者：
Yang, Liaoqiao [1 ]
Zhang, Jianhua [2 ]
Hu, Jianzheng [3 ]
机构：
[1] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai, Peoples R China
[2] Shanghai Univ, Sch Mechatron & Automat, Shanghai, Peoples R China
[3] Rainbow Optoelect Mat Shanghai Co LTD, Shanghai, Peoples R China
来源：
NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 | 2011年
关键词：
Numerical simulation; MOCVD; CFD; LED;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a novel super large metal organic chemical vapor deposition (MOCVD) reactor with three inlets located on the periphery of reactor was proposed and numerical evaluation of growth conditions for GaN thin film was characterized. In this design, the converging effects of gas flow in the radial direction could counterbalance the dissipation of metal oxide source. The growth of GaN films using TMGa as a precursor, hydrogen as carrier gas was investigated. For the mathematical solution of the fluid flow, temperature and concentration fields, the commercialized computational fluid dynamics (CFD) based solver-Ansys-FLUENT was utilized. A 2-D model utilizing axisymmetric mode to simulate the gas flow in a MOCVD has been developed. The effects of the temperature, mass fraction, and the total flow of carrier gas on the flow field, temperature field, and species distribution were analyzed and discussed. The numerical simulation results shows all the fields distribution were in an acceptable range.
引用
收藏
页码：655 / 658
页数：4
相关论文
共 50 条
  • [21] Numerical study of the growth conditions in an MOCVD reactor:: application to the epitaxial growth of HgTe
    Tena-Zaera, R
    Mora-Seró, I
    Martínez-Tomás, C
    Muñoz-Sanjosé, V
    JOURNAL OF CRYSTAL GROWTH, 2002, 240 (1-2) : 124 - 134
  • [22] Numerical study of the growth conditions in a MOCVD reactor:: Application to the epitaxial growth of CdTe
    Tena-Zaera, R
    Mora-Seró, I
    Martinez-Tomas, C
    Muñoz-Sanjosé, V
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2003, 5 (01): : 97 - 108
  • [23] High efficiency and improved ESD characteristics of GaN-Based LEDs with naturally textured surface grown by MOCVD
    Tsai, C. M.
    Sheu, J. K.
    Wang, P. T.
    Lai, W. C.
    Shei, S. C.
    Chang, S. J.
    Kuo, C. H.
    Kuo, C. W.
    Su, Y. K.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1213 - 1215
  • [24] Metalens improves production of GaN-based LEDs
    不详
    AMERICAN CERAMIC SOCIETY BULLETIN, 2021, 100 (07): : 26 - 27
  • [25] Fabrication of GaN-Based resonant cavity LEDs
    Maaskant, P
    Akhter, M
    Roycroft, B
    O'Carroll, E
    Corbett, B
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 192 (02): : 348 - 353
  • [26] Light extraction analysis of GaN-based LEDs
    Lee, Tung-Xian
    Go, Kuo-Fong
    Chung, Te-Yuan
    Sun, Ching-Cherng
    GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473
  • [27] Magnetic resonance studies of GaN-based LEDs
    Carlos, WE
    Nakamura, S
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 794 - 797
  • [28] GaN-based LEDs with Ar plasma treatment
    Kuo, D. S.
    Lam, K. T.
    Wen, K. H.
    Chang, S. J.
    Ko, T. K.
    Hon, S. J.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (01) : 52 - 55
  • [29] The state of SiC:GaN-based blue LEDs
    Edmond, J
    Kong, HS
    Leonard, M
    Bulman, G
    Negley, G
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 991 - 994
  • [30] GaN-Based LEDs Grown on HVPE Growth High Crystalline Quality Thick GaN Template
    Lin, D. W.
    Lin, C. C.
    Chiu, C. H.
    Lee, C. Y.
    Yang, Y. Y.
    Li, Z. Y.
    Lai, W. C.
    Lu, T. C.
    Kuo, H. C.
    Wang, S. C.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (11) : H1103 - H1106
12345