Study of Defects on Zn0.95Mn0.05O by Using Deep Level Transient Spectroscopy

被引：0
|
作者：
Kim, Jae-Hoon [1 ,2 ]
Song, Hooyoung [1 ,2 ]
Kim, Eun Kyu [1 ,2 ]
Kim, Young Dong [3 ,4 ]
Chu, Hong [5 ]
机构：
[1] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Kyung Hee Univ, Nanoopt Res Lab, Seoul 130701, South Korea
[4] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea
[5] Laseroptek Ltd, Songnam 462714, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期
关键词：
ZnO; ZnMnO; Diluted magnetic semiconductor; Deep level transient spectroscopy;
D O I：
10.3938/jkps.53.2374
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Defect states are important to the characteristics of diluted magnetic semiconductor materials. In this study, the electrical activation energies of the defects of Zn0.95Mn0.05O were analyzed by using deep level transient spectroscopy (DLTS). The Zn0.95Mn0.05O films had been deposited with growth temperature modulation by using a pulsed laser deposition method with a mixture target. In the films grown at 450 degrees C, the carrier concentration was about 1 x 10(16) cm(-3) based on the carrier profile of the capacitance-voltage measurement. X-ray diffraction showed a ZnO based Wurtzite structure. The DLTS signals appeaxing in the ZnMnO have an activation energy of 0.13 eV and are thougth to be due to defects originating from Mn-related site. The oxygen vacancy defect was also observed in the DLTS spectra.
引用
收藏
页码：2374 / 2377
页数：4
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