Scanning deep level transient spectroscopy measurements of extended defects in silicon

被引：0
|
作者：
Knobloch, K
Mittler, M
Seifert, W
Higgs, V
机构：
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY | 1996年 / 51-5卷
关键词：
scanning DLTS; EBIC; deep levels; extended defects; electrical activity;
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A capacitance scanning deep level transient spectroscopy system with a sensitivity of (Delta C degrees/C)=10(-6) was developed. For a multicrystalline Si sample it is demonstrated that the sensitivity of the system is sufficient to allow measurements of the spatial distribution of deep levels of technologically relevant concentrations. Specific issues of electron beam excited deep level transient spectroscopy (interface states, excitation conditions, capture of carriers) are addressed.
引用
收藏
页码：63 / 68
页数：6
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