A sub-l-V 15-ppm/°C CMOS bandgap voltage reference without requiring low threshold voltage device

被引：0
|
作者：
Leung, KN [1 ]
Mok, PKT [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 04期
关键词：
CMOS bandgap voltage reference; low voltage; temperature;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A sub-1-V CMOS bandgap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with V-thn approximate to\V-thp\ approximate to 0.9 V at 0 degreesC, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 muA. A temperature coefficient of 15 ppm/degreesC from 0 degreesC to 100 degreesC is recorded after trimming. The active area of the circuit is about 0.24 mm(2).
引用
收藏
页码：526 / 530
页数：5
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