A sub-l-V 15-ppm/°C CMOS bandgap voltage reference without requiring low threshold voltage device

被引：0

作者：

Leung, KN ^{[1
]}

Mok, PKT ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 04期

关键词：

CMOS bandgap voltage reference; low voltage; temperature;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A sub-1-V CMOS bandgap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with V-thn approximate to\V-thp\ approximate to 0.9 V at 0 degreesC, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 muA. A temperature coefficient of 15 ppm/degreesC from 0 degreesC to 100 degreesC is recorded after trimming. The active area of the circuit is about 0.24 mm(2).

引用

页码：526 / 530

页数：5

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