RF CMOS linearity analysis using harmonic balance device simulation

被引：0
|
作者：
Kopalle, D [1 ]
Niu, GF
Taylor, SS
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, 200 Broun Hall, Auburn, AL 36849 USA
[2] Intel Corp, Commun Circuit Lab, Hillsboro, OR 97124 USA
来源：
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intermodulation linearity of CMOS transistors obtained from device level Harmonic Balance simulation is compared to that obtained using I-V data and good agreement between the two approaches is observed. Linearity is simulated as a function of channel length and oxide thickness. The impact of poly-gate depletion effect on linearity is also analyzed.
引用
收藏
页码：69 / +
页数：2
相关论文
共 50 条
  • [1] Device analysis of linearity in RF power devices by harmonic balance device simulation
    Tornblad, Olof
    Ma, Gordon
    Dutton, Robert W.
    2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 868 - +
  • [2] Linearity analysis of RF LDMOS devices utilizing harmonic balance device simulation
    Tornblad, O
    Ito, CS
    Rotella, F
    Ma, G
    Dutton, RW
    SISPAD: 2005 International Conference on Simulation of Semiconductor Processes and Devices, 2005, : 243 - 246
  • [3] Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation
    Rotella, F.M.
    Ma, G.
    Yu, Z.
    Dutton, R.W.
    2000, IEEE, Piscataway, NJ, United States (48)
  • [4] Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation
    Rotella, FM
    Ma, G
    Yu, Z
    Dutton, RW
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (06) : 991 - 999
  • [5] Linearity analysis of CMOS for RF application
    Kang, S
    Choi, B
    Kim, B
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 279 - 282
  • [6] Linearity analysis of CMOS for RF application
    Kang, S
    Choi, B
    Kim, B
    2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 363 - 366
  • [7] Linearity analysis of CMOS for RF application
    Kang, S
    Choi, B
    Kim, B
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (03) : 972 - 977
  • [8] Harmonic balance analysis for coupled device and circuit simulation
    Hu, YT
    Mayaram, K
    RAWCON 2001: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, 2001, : 137 - 140
  • [9] Experimental characterization and simulation of RF intermodulation linearity in a 90 nm RF CMOS technology
    Wei, Xiaoyun
    Niu, Guofu
    Li, Ying
    Yang, Ming-Ta
    Taylor, Stewart S.
    2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2, 2008, : 223 - +
  • [10] Harmonic balance device analysis of an LDMOS RF power amplifier with parasitics and matching network
    Rotella, FM
    Yu, ZP
    Dutton, R
    Troyanovsky, B
    Ma, G
    SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 1997, : 157 - 159
12345