Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

被引：110
|
作者：
Yang, Jialin [1 ]
Liu, Kewei [1 ,2 ]
Chen, Xing [1 ,2 ]
Shen, Dezhen [1 ,2 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
PROGRESS IN QUANTUM ELECTRONICS | 2022年 / 83卷
基金：
中国国家自然科学基金;
关键词：
LIGHT-EMITTING-DIODES; SOLAR-BLIND PHOTODETECTOR; FIELD-EFFECT TRANSISTORS; DIAMOND UV DETECTOR; LOW DARK CURRENT; BIPOLAR JUNCTION TRANSISTOR; BETA-GA2O3; SINGLE-CRYSTALS; ELECTRON BLOCKING LAYER; THIN-FILM; ULTRAVIOLET PHOTODETECTORS;
D O I：
10.1016/j.pquantelec.2022.100397
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawidebandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.
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页数：29
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