Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

被引：110
|
作者：
Yang, Jialin [1 ]
Liu, Kewei [1 ,2 ]
Chen, Xing [1 ,2 ]
Shen, Dezhen [1 ,2 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
PROGRESS IN QUANTUM ELECTRONICS | 2022年 / 83卷
基金：
中国国家自然科学基金;
关键词：
LIGHT-EMITTING-DIODES; SOLAR-BLIND PHOTODETECTOR; FIELD-EFFECT TRANSISTORS; DIAMOND UV DETECTOR; LOW DARK CURRENT; BIPOLAR JUNCTION TRANSISTOR; BETA-GA2O3; SINGLE-CRYSTALS; ELECTRON BLOCKING LAYER; THIN-FILM; ULTRAVIOLET PHOTODETECTORS;
D O I：
10.1016/j.pquantelec.2022.100397
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawidebandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride (AlGaN), gallium oxide (Ga2O3), and diamond, have attracted increasing attention due to their advantages, including high breakdown field, high stability, and high radiation resistance. In this review, recent research pertaining to UWBG semiconductors in optoelectronics and microelectronics is introduced. Moreover, the challenges and opportunities of UWBG semiconductors are deliberated. It is expected that this review will provide inspiration and insights for further related research.
引用
收藏
页数：29
相关论文
共 50 条
  • [31] Realizing freestanding single-crystal oriented membranes of ultrawide-bandgap semiconductor ε-Ga2O3 and their prospects in optoelectronic device applications
    Zhang, Tao
    Shen, Jiaying
    Dong, Dianmeng
    Zhang, Qingyi
    Wang, Tiejun
    Zhang, Fan
    Wu, Zhenping
    APPLIED PHYSICS LETTERS, 2025, 126 (10)
  • [32] Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices
    Hao, Qiaoyan
    Li, Peng
    Liu, Jidong
    Huang, Jiarui
    Zhang, Wenjing
    JOURNAL OF MATERIOMICS, 2023, 9 (03) : 527 - 540
  • [33] Editorial: Recent Advances in Micro-Nanostructured Optoelectronic Devices
    Liu, Yue-Feng
    Gao, Xiu-Min
    Li, Yun-Fei
    FRONTIERS IN CHEMISTRY, 2022, 10
  • [34] RECENT ADVANCES IN MICROELECTRONIC ION-SENSITIVE DEVICES (ISFETS) - THE OPERATIONAL TRANSDUCER
    COVINGTON, AK
    WHALLEY, PD
    JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1986, 82 : 1209 - &
  • [35] Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides
    Ye, Mingxiao
    Zhang, Dongyan
    Yap, Yoke Khin
    ELECTRONICS, 2017, 6 (02)
  • [36] Recent advances in amorphous and microcrystalline silicon basis devices for optoelectronic applications
    Hamakawa, Y
    APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 215 - 226
  • [37] Recent advances and comprehensive insights on nickel oxide in emerging optoelectronic devices
    Gong, Yongshuai
    Zhang, Shuai
    Gao, Huaizhi
    Ma, Zongwen
    Hu, Siqian
    Tan, Zhan'an
    SUSTAINABLE ENERGY & FUELS, 2020, 4 (09): : 4415 - 4458
  • [38] Recent advances in amorphous and microcrystalline silicon basis devices for optoelectronic applications
    Hamakawa, Yoshihiro
    Applied Surface Science, 1999, 142 (01): : 215 - 226
  • [39] Recent Advances in the Functional 2D Photonic and Optoelectronic Devices
    Wang, Xiaoting
    Cui, Yu
    Li, Tao
    Lei, Ming
    Li, Jingbo
    Wei, Zhongming
    ADVANCED OPTICAL MATERIALS, 2019, 7 (03)
  • [40] Toward Eco-friendly Green Organic Semiconductors: Recent Advances in Spiro[fluorene-9,9'-xanthene] (SFX)-Based Optoelectronic Materials and Devices
    Sun, Mingli
    Xu, Ruochen
    Xie, Linghai
    Wei, Ying
    Huang, Wei
    CHINESE JOURNAL OF CHEMISTRY, 2015, 33 (08) : 815 - 827
12345