Observation of photoluminescence from a natural van der Waals heterostructure

被引:0
|
作者
Costa, Viviane Z. [1 ]
Baker, Bryce [1 ]
Sinn, Hon-Loen [1 ]
Miller, Addison [1 ]
Watanabe, K. [2 ]
Taniguchi, T. [2 ]
Newaz, Akm [1 ]
机构
[1] San Francisco State Univ, Dept Phys & Astron, San Francisco, CA 94132 USA
[2] Natl Inst Mat Sci, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan
基金
美国国家科学基金会;
关键词
GRAPHENE; OPTOELECTRONICS; INSULATOR;
D O I
10.1063/5.0089439
中图分类号
O59 [应用物理学];
学科分类号
摘要
van der Waals heterostructures comprised of two-dimensional (2D) materials offer a platform to obtain materials by design with unique electronic properties. Franckeite (Fr) is a naturally occurring van der Waals heterostructure comprised of two distinct alternately stacked semiconducting layers: (i) SnS2 layer and (ii) Pb3SbS4. Though both layers in the heterostructure are semiconductors, the photoluminescence from Franckeite remains elusive. Here, we report the observation of photoluminescence (PL) from Franckeite. We observed two PL peaks at ~ 1.97 and ~2.12 eV at 1.5 K. By varying the temperature from 1.5 to 280 K, we found that the PL peak position blueshifts and the integrated intensity decreases slowly as we increase the temperature. We observed linear dependence of photoluminescence integrated intensity on excitation laser power, indicating that the photoluminescence is originating from free excitons in the SnS2 layer of Fr. By comparing the PL from Fr with the PL from a monolayer MoS2, we determined that the PL quantum efficiency from Fr is an order of magnitude lower than that of a monolayer MoS2. Our study provides a fundamental understanding of the optical behavior in a complex naturally occurring van der Waals heterostructure and may pave an avenue toward developing nanoscale optical and optoelectronic devices with tailored properties. Published under an exclusive license by AIP Publishing.
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页数:6
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