Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

被引：3
|
作者：
Wang, Lei [1 ]
Liu, Haiyun [2 ]
Liu, Xing [1 ]
机构：
[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Peoples R China
[2] Hohai Univ, Coll Comp & Informat, Nanjing 211100, Peoples R China
来源：
MICROMACHINES | 2022年 / 13卷 / 05期
关键词：
electron irradiation; polycrystalline silicon; grain boundary evolution; GAMMA; COMPENSATION; RESISTANCE;
D O I：
10.3390/mi13050743
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
A specimen observed with a transmission electron microscope (TEM) was processed by focused ion beam (FIB) from a surface-micromachined polycrystalline silicon MEMS structure. Electron irradiation and in situ observation were performed on a selected grain boundary in the specimen. The grain boundary was observed and located by using lattice-oriented selective TEM photography. An evolution progress of amorphization of small silicon grain within the grain boundary and recrystallization of amorphous silicon were observed. A silicon grain turned into several smaller bar grains within the grain boundary. The mechanism of grain-boundary evolution inducing a change of conductivity of polycrystalline silicon has been revealed. The conductivity of polycrystalline silicon influenced by electron irradiation could be attributed to the change of grain boundary.
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页数：10
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