Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

被引：3

作者：

Wang, Lei ^{[1
]}

Liu, Haiyun ^{[2
]}

Liu, Xing ^{[1
]}

机构：

[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Peoples R China

[2] Hohai Univ, Coll Comp & Informat, Nanjing 211100, Peoples R China

来源：

MICROMACHINES | 2022年 / 13卷 / 05期

关键词：

electron irradiation; polycrystalline silicon; grain boundary evolution; GAMMA; COMPENSATION; RESISTANCE;

D O I：

10.3390/mi13050743

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A specimen observed with a transmission electron microscope (TEM) was processed by focused ion beam (FIB) from a surface-micromachined polycrystalline silicon MEMS structure. Electron irradiation and in situ observation were performed on a selected grain boundary in the specimen. The grain boundary was observed and located by using lattice-oriented selective TEM photography. An evolution progress of amorphization of small silicon grain within the grain boundary and recrystallization of amorphous silicon were observed. A silicon grain turned into several smaller bar grains within the grain boundary. The mechanism of grain-boundary evolution inducing a change of conductivity of polycrystalline silicon has been revealed. The conductivity of polycrystalline silicon influenced by electron irradiation could be attributed to the change of grain boundary.

引用

页数：10

共 50 条

[11] PASSIFICATION OF GRAIN-BOUNDARY ELECTRONIC STATES IN POLYCRYSTALLINE SILICON
SEAGER, CH
GINLEY, DS
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 401 - 401
[12] GRAIN-BOUNDARY DIFFUSION OF PHOSPHORUS IN POLYCRYSTALLINE SILICON - COMMENT
MATARE, HF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 107 - 107
[13] GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM
SMITH, DA
GROVENOR, CRM
BATSON, PE
WONG, C
ULTRAMICROSCOPY, 1984, 14 (1-2) : 131 - 134
[14] Control of grain-boundary tunneling barriers in polycrystalline silicon
Kamiya, T
Durrani, ZAK
Ahmed, H
APPLIED PHYSICS LETTERS, 2002, 81 (13) : 2388 - 2390
[15] GRAIN-BOUNDARY DIFFUSION OF ALUMINUM IN POLYCRYSTALLINE SILICON FILMS
HWANG, JCM
HO, PS
LEWIS, JE
CAMPBELL, DR
JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1576 - 1581
[16] PHOTOCONDUCTIVITY IN POLYCRYSTALLINE SEMICONDUCTORS - GRAIN-BOUNDARY EFFECTS
DUTTA, J
BHATTACHARYYA, D
CHAUDHURI, S
PAL, AK
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1995, 36 (04) : 357 - 368
[17] Nanocrack nucleation in polycrystalline silicon during grain-boundary sliding
Ovid'ko, I. A.
Sheinerman, A. G.
PHYSICS OF THE SOLID STATE, 2007, 49 (06) : 1111 - 1115
[18] Nanocrack nucleation in polycrystalline silicon during grain-boundary sliding
I. A. Ovid’ko
A. G. Sheinerman
Physics of the Solid State, 2007, 49 : 1111 - 1115
[19] GRAIN-BOUNDARY DIFFUSION AND SEGREGATION OF CARBON AND PHOSPHORUS IN POLYCRYSTALLINE SILICON
CHARI, A
AUCOUTURIER, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C118 - C118
[20] GRAIN-BOUNDARY RECOMBINATION IN POLYCRYSTALLINE SILICON UNDER OPTICAL ILLUMINATION
JOSHI, DP
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 103 (01): : 213 - 218

← 1 2 3 4 5 →