Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation

被引：0

作者：

Mo, Rigen ^{[1
]}

Li, Pengwei ^{[1
]}

Lyu, He ^{[1
]}

Mei, Bo ^{[1
]}

Sun, Yi ^{[1
]}

Yu, Qingkui ^{[1
]}

Cao, Shuang ^{[1
]}

Wang, Qianyuan ^{[1
]}

Zhang, Hongwei ^{[1
]}

机构：

[1] China Acad Space Technol, Beijing, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2023年 / 150卷

关键词：

GLPNP transistor; Annealing effect; Total dose irradiation; Microscopic defect; Electrical properties; DISPLACEMENT DAMAGE; BORDER TRAPS; IONIZATION; MECHANISMS; DEFECTS; BUILDUP; MODEL;

D O I：

10.1016/j.microrel.2023.115125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article investigates the annealing process of bipolar transistors after total dose irradiation, using the GLPNP transistor as the research object. After total dose irradiation, room temperature and high temperature annealing tests were carried out. Gummel curve, GS curve and SS curve of bipolar transistor are obtained by I/V scanning, gate scanning and sub-threshold scanning. The evolution behavior of radiation-induced oxide trap charges and interface state damage defects during annealing of bipolar transistors at different temperatures was quantitatively analyzed by different microscopic defect characterization methods. Generally speaking, this study is of great significance to better understand the recovery mechanism of electrical properties of bipolar transistors during annealing after total dose irradiation, and can provide reference for the design, application and radiationhard of transistors.

引用

页数：7

共 50 条

[21] Low Temperature Total Dose Irradiation of Transistors for Infrared Applications
Nuns, T.
David, J. -P.
Soonckindt, S.
Gilard, O.
Perrier, F.
Ducret, S.
Sanchez, K.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 3341 - 3347
[22] Recent advances in understanding total-dose effects in bipolar transistors
Schrimpf, RD
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (03) : 787 - 796
[23] A Total Ionizing Dataset Dose Dataset for Vertical NPN Bipolar Transistors
Adams, Dennis A.
Barnes, Herbert A.
Goldstein, Norman P.
Harms, David C.
Horner, Jeremiah J.
Sherman, Cory E.
Stodart, Craig
2014 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2014,
[24] Recent advances in understanding total-dose effects in bipolar transistors
Schrimpf, RD
RADECS 95 - THIRD EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1996, : 9 - 18
[25] TRENDS IN THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS
NOWLIN, RN
ENLOW, EW
SCHRIMPF, RD
COMBS, WE
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 2026 - 2035
[26] Total dose effects on elementary transistors of a comparator in bipolar technology.
Bosc, JM
Sarrabayrouse, G
Guerre, FX
RADECS 95 - THIRD EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1996, : 223 - 229
[27] BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS
KOSIER, SL
COMBS, WE
WEI, A
SCHRIMPF, RD
FLEETWOOD, DM
DELAUS, M
PEASE, RL
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 1864 - 1870
[28] Effect of low-temperature irradiation on ELDRS in bipolar transistors
Bakerenkov, Alexander S.
Pershenkov, Viacheslav S.
Felitsyn, Vladislav A.
Rodin, Alexander S.
Telets, Vitaly A.
Belyakov, Vladimir V.
Shurenkov, Vladimir V.
Miroshnichenko, Alina G.
Glukhov, Nikita S.
2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2016,
[29] Total-dose-induced edge effect in SOI NMOS transistors with different layouts
Liu, Jie
Zhou, Jicheng
Luo, Hongwei
Kong, Xuedong
En, Yunfei
Shi, Qian
He, Yujuan
MICROELECTRONICS RELIABILITY, 2010, 50 (01) : 45 - 47
[30] INVESTIGATION OF SURFACE IONIZATION EFFECT ON PLANAR SILICON BIPOLAR TRANSISTORS AND IMPROVEMENT OF RESISTANCE TO RADIATION BY AN IRRADIATION-ANNEALING TREATMENT
BAUERLEIN, R
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 52 - +

← 1 2 3 4 5 →