Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation

被引：0

作者：

Mo, Rigen ^{[1
]}

Li, Pengwei ^{[1
]}

Lyu, He ^{[1
]}

Mei, Bo ^{[1
]}

Sun, Yi ^{[1
]}

Yu, Qingkui ^{[1
]}

Cao, Shuang ^{[1
]}

Wang, Qianyuan ^{[1
]}

Zhang, Hongwei ^{[1
]}

机构：

[1] China Acad Space Technol, Beijing, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2023年 / 150卷

关键词：

GLPNP transistor; Annealing effect; Total dose irradiation; Microscopic defect; Electrical properties; DISPLACEMENT DAMAGE; BORDER TRAPS; IONIZATION; MECHANISMS; DEFECTS; BUILDUP; MODEL;

D O I：

10.1016/j.microrel.2023.115125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article investigates the annealing process of bipolar transistors after total dose irradiation, using the GLPNP transistor as the research object. After total dose irradiation, room temperature and high temperature annealing tests were carried out. Gummel curve, GS curve and SS curve of bipolar transistor are obtained by I/V scanning, gate scanning and sub-threshold scanning. The evolution behavior of radiation-induced oxide trap charges and interface state damage defects during annealing of bipolar transistors at different temperatures was quantitatively analyzed by different microscopic defect characterization methods. Generally speaking, this study is of great significance to better understand the recovery mechanism of electrical properties of bipolar transistors during annealing after total dose irradiation, and can provide reference for the design, application and radiationhard of transistors.

引用

页数：7

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