Optimal Weight-Splitting in Resistive Random Access Memory-Based Computing-in-Memory Macros

被引:4
|
作者
Song, Choongseok [1 ]
Kim, Jeeson [1 ]
Jeong, Doo Seok [1 ]
机构
[1] Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea
基金
新加坡国家研究基金会;
关键词
computing-in-memory; mixed signal-based CIM; optimal weight-spliting; RRAM-based CIM macro; SAR ADC; MEMRISTOR; DEVICES; RRAM;
D O I
10.1002/aisy.202200289
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Computing-in-memory (CIM) is considered a feasible solution to the acceleration of multiply-accumulate (MAC) operations at low power. The key to CIM is parallel MAC operations in the memory domain, and thus reductions in power consumption and memory-access latency. Resistive random access memory (RRAM) can be a good candidate for the memory for CIM given its data nonvolatility, high data density, low-latency read-out, multilevel representation, and inherent current accumulation capability. Particularly, the last two attributes offer analog MAC operations in parallel in the memory domain. However, the fully analog MAC operation scheme causes significant power and area overheads for its peripheral circuits, particularly, analog-to-digital converters. To compensate for these downsides using digital processing, a method for sub-array-wise partial MAC operations over weight-resistors that are optimally split to minimize power and area overheads for the peripheral circuits is proposed. The simulations performed highlight the optimal sub-array of 4xw/2 in size. That is, weight-splitting such that a single w-bit weight is represented by w/2 RRAM cells, i.e., 2-bit for each cell. For 8-bit weights, the figure of merit (FOM) for this optimal case reaches approximate to 28.3x FOM for the case of no weight-splitting.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] A computing-in-memory macro based on three-dimensional resistive random-access memory
    Huo, Qiang
    Yang, Yiming
    Wang, Yiming
    Lei, Dengyun
    Fu, Xiangqu
    Ren, Qirui
    Xu, Xiaoxin
    Luo, Qing
    Xing, Guozhong
    Chen, Chengying
    Si, Xin
    Wu, Hao
    Yuan, Yiyang
    Li, Qiang
    Li, Xiaoran
    Wang, Xinghua
    Chang, Meng-Fan
    Zhang, Feng
    Liu, Ming
    NATURE ELECTRONICS, 2022, 5 (07) : 469 - 477
  • [2] A computing-in-memory macro based on three-dimensional resistive random-access memory
    Qiang Huo
    Yiming Yang
    Yiming Wang
    Dengyun Lei
    Xiangqu Fu
    Qirui Ren
    Xiaoxin Xu
    Qing Luo
    Guozhong Xing
    Chengying Chen
    Xin Si
    Hao Wu
    Yiyang Yuan
    Qiang Li
    Xiaoran Li
    Xinghua Wang
    Meng-Fan Chang
    Feng Zhang
    Ming Liu
    Nature Electronics, 2022, 5 : 469 - 477
  • [3] Optimal data distribution in FeFET-based computing-in-memory macros
    Sim, Yonguk
    Song, Choongseok
    Park, Eun Chan
    Jeon, Jongwook
    Kwon, Daewoong
    Jeong, Doo Seok
    2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024, 2024,
  • [4] A Relaxed Quantization Training Method for Hardware Limitations of Resistive Random Access Memory (ReRAM)-Based Computing-in-Memory
    Wei, Wei-Chen
    Jhang, Chuan-Jia
    Chen, Yi-Ren
    Xue, Cheng-Xin
    Sie, Syuan-Hao
    Lee, Jye-Luen
    Kuo, Hao-Wen
    Lu, Chih-Cheng
    Chang, Meng-Fan
    Tang, Kea-Tiong
    IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2020, 6 (01): : 45 - 52
  • [5] On Designing Efficient and Reliable Nonvolatile Memory-Based Computing-In-Memory Accelerators
    Yan, Bonan
    Liu, Mengyun
    Chen, Yiran
    Chakrabarty, Krishnendu
    Li, Hai
    2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2019,
  • [6] Magnetic Random-Access Memory-Based Approximate Computing: An Overview
    Wang, You
    Zhang, Kaili
    Wu, Bo
    Zhang, Deming
    Zhao, Weisheng
    Cai, Hao
    IEEE NANOTECHNOLOGY MAGAZINE, 2022, 16 (01) : 25 - 32
  • [7] A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing
    Yoon, Jeong Hyun
    Song, Young-Woong
    Ham, Wooho
    Park, Jeong-Min
    Kwon, Jang-Yeon
    APL MATERIALS, 2023, 11 (09)
  • [8] Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips
    Liu, Yuyi
    Gao, Bin
    Tang, Jianshi
    Wu, Huaqiang
    Qian, He
    SCIENCE CHINA-INFORMATION SCIENCES, 2023, 66 (10)
  • [9] Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips
    Yuyi LIU
    Bin GAO
    Jianshi TANG
    Huaqiang WU
    He QIAN
    ScienceChina(InformationSciences), 2023, 66 (10) : 152 - 161
  • [10] In Memory Energy Application for Resistive Random Access Memory
    Trotti, Paola
    Oukassi, Sami
    Molas, Gabriel
    Bernard, Mathieu
    Aussenac, Francois
    Pillonnet, Gael
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (12):