A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

被引：1
|
作者：
Zhao, Yulin [1 ,2 ]
Wang, Yuan [1 ,2 ]
Zhang, Donglin [1 ,2 ]
Han, Zhongze [1 ,2 ]
Hu, Qiao [1 ,4 ]
Liu, Xuanzhi [1 ,4 ]
Ding, Qingting [1 ,2 ]
Cheng, Jinhui [1 ,4 ]
Zhang, Wenjun [3 ]
Cao, Yue [3 ]
Zhou, Ruixi [3 ]
Luo, Qing [1 ,2 ]
Yang, Jianguo [1 ,2 ,3 ]
Lv, Hangbing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Zhejiang Lab, Hangzhou 311121, Peoples R China
[4] Univ Sci & Technol China, Sch Microelect, Hefei 230000, Peoples R China
来源：
SCIENCE CHINA-INFORMATION SCIENCES | 2023年 / 66卷 / 05期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
D O I：
10.1007/s11432-021-3490-3
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
    Haidong Lu
    Dong-Jik Kim
    Hugo Aramberri
    Marco Holzer
    Pratyush Buragohain
    Sangita Dutta
    Uwe Schroeder
    Veeresh Deshpande
    Jorge Íñiguez
    Alexei Gruverman
    Catherine Dubourdieu
    Nature Communications, 15
  • [32] Epitaxial Ferroelectric Hf0.5Zr0.5O2 with Metallic Pyrochlore Oxide Electrodes
    Zhang, Zimeng
    Hsu, Shang-Lin
    Stoica, Vladimir A.
    Paik, Hanjong
    Parsonnet, Eric
    Qualls, Alexander
    Wang, Jianjun
    Xie, Liang
    Kumari, Mukesh
    Das, Sujit
    Leng, Zhinan
    McBriarty, Martin
    Proksch, Roger
    Gruverman, Alexei
    Schlom, Darrell G.
    Chen, Long-Qing
    Salahuddin, Sayeef
    Martin, Lane W.
    Ramesh, Ramamoorthy
    ADVANCED MATERIALS, 2021, 33 (10)
  • [33] Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2
    Islamov, D. R.
    Chernikova, A. G.
    Kozodaev, M. G.
    Perevalov, T. V.
    Gritsenko, V. A.
    Orlov, O. M.
    Markeev, A. V.
    NONVOLATILE MEMORIES 5, 2017, 75 (32): : 123 - 129
  • [34] Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors
    Webb, Matthew
    Chiang, Tony
    Lenox, Megan K.
    Gray, Jordan
    Ma, Tao
    Ihlefeld, Jon F.
    Heron, John T.
    APL MATERIALS, 2025, 13 (01):
  • [35] Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films
    Cheng, Xianlong
    Zhou, Chao
    Lin, Baichen
    Yang, Zhenni
    Chen, Shanquan
    Zhang, Kelvin H. L.
    Chen, Zuhuang
    APPLIED MATERIALS TODAY, 2023, 32
  • [36] Interface Engineering on Ferroelectricity of Transparent Hf0.5Zr0.5O2 Ferroelectric Capacitors
    Zhang, Shuning
    Cao, Fansen
    Lu, Haoyu
    Wei, Yingfen
    Zhao, Xuanyu
    Jiang, Hao
    Yan, Xiaobing
    Liu, Qi
    IEEE Electron Device Letters, 2024, 45 (12) : 2347 - 2350
  • [37] Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
    Lyu, Jike
    Fina, Ignasi
    Solanas, Raul
    Fontcuberta, Josep
    Sanchez, Florencio
    ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (02): : 220 - 228
  • [38] Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
    Estandia, Saul
    Dix, Nico
    Gazquez, Jaume
    Fina, Ignasi
    Lyu, Jike
    Chisholm, Matthew F.
    Fontcuberta, Josep
    Sanchez, Florencio
    ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (08) : 1449 - 1457
  • [39] The Excellent Bending Limit of a Flexible Si-Based Hf0.5Zr0.5O2 Ferroelectric Capacitor with an Al Buffer Layer
    Xie, Xinyu
    Qi, Jiabin
    Wang, Hui
    Liu, Zongfang
    Wu, Wenhao
    Lee, Choonghyun
    Zhao, Yi
    ELECTRONICS, 2024, 13 (01)
  • [40] Electroresistance in metal/ferroelectric/semiconductor tunnel junctions based on a Hf0.5Zr0.5O2 barrier
    Jiao, Peijie
    Xi, Zhongnan
    Zhang, Xiaoyu
    Han, Yajie
    Wu, Yang
    Wu, Di
    APPLIED PHYSICS LETTERS, 2021, 118 (25)
12345