A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

被引：1
|
作者：
Zhao, Yulin [1 ,2 ]
Wang, Yuan [1 ,2 ]
Zhang, Donglin [1 ,2 ]
Han, Zhongze [1 ,2 ]
Hu, Qiao [1 ,4 ]
Liu, Xuanzhi [1 ,4 ]
Ding, Qingting [1 ,2 ]
Cheng, Jinhui [1 ,4 ]
Zhang, Wenjun [3 ]
Cao, Yue [3 ]
Zhou, Ruixi [3 ]
Luo, Qing [1 ,2 ]
Yang, Jianguo [1 ,2 ,3 ]
Lv, Hangbing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Zhejiang Lab, Hangzhou 311121, Peoples R China
[4] Univ Sci & Technol China, Sch Microelect, Hefei 230000, Peoples R China
来源：
SCIENCE CHINA-INFORMATION SCIENCES | 2023年 / 66卷 / 05期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
D O I：
10.1007/s11432-021-3490-3
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页数：2
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