Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications

被引：0

作者：

Rathi, Aarti ^{[1
]}

Dixit, Abhisek ^{[1
]}

Satish, Naga ^{[3
]}

Srinivasan, P. ^{[2
]}

Guarin, Fernando ^{[2
]}

机构：

[1] Indian Inst Technol Delhi, Dept Elect Engn, New Delhi, India

[2] GLOBALFOUNDRIES Inc, Qual & Reliabil Engn, Malta, NY USA

[3] GLOBALFOUNDRIES Inc, Qual & Reliabil Engn, Bangalore, Karnataka, India

来源：

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年

关键词：

Dynamic Aging; mmWave; Reliability; RF Switches; T/R SWITCH;

D O I：

10.1109/IRPS48203.2023.10118205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we have investigated the reliability degradation mechanisms in RF switches for 45nm RFSOI technology under DC and RF stress modes. We have used single-pole single-throw RF switches using thin and thick gate oxide in series stacked configurations using R-ON.C-OFF as a key metric. Degradation and breakdown depend on stress time, DC gate and drain voltages, and RF power. The mechanism causing degradation is studied using the voltage swings at the terminals of the RF switch. In addition, stress recovery is also observed in some cases, which is critical for switches used in transceivers. Overall, the switch exhibits superior reliability under RF 5G mmWave operating conditions.

引用

页数：6

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