Poly-Si/a-Si/4H-SiC p-n heterojunction broadband photodetector prepared by magnetron sputtering

被引：0

作者：

Li, Zihao ^{[1
]}

Zhang, Mingkun ^{[1
,2
]}

Fu, Zhao ^{[1
]}

Zhang, Zeyang ^{[1
]}

Wu, Shaoxiong ^{[1
]}

Zhang, Yuning ^{[1
]}

Lin, Dingqu ^{[1
]}

Hong, Rongdun ^{[1
,3
]}

Cai, Jiafa ^{[1
,3
]}

Chen, Xiaping ^{[1
,3
]}

Zhang, Feng ^{[1
,3
]}

机构：

[1] Xiamen Univ, Coll Phys Sci & Technol, Dept Phys, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Sch Elect Sci & Engn, Peoples Republicof China, Xiamen 361005, Peoples R China

[3] Jiujiang Res Inst Xiamen Univ, Jiujiang 332000, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2024年 / 57卷 / 21期

基金：

中国国家自然科学基金;

关键词：

poly-Si/a-Si/4H-SiC heterojunction; broadband photodetector; energy band diagram; ULTRAVIOLET; PHOTODIODES;

D O I：

10.1088/1361-6463/ad2bdb

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With the increasing complexity of scenarios, there is a growing need for broadband photodetectors (PDs). In this work, we report a polycrystalline-Si (poly-Si)/amorphous-Si (a-Si)/4H-SiC p-n heterojunction PD with efficient response in a broad spectral range of ultraviolet-visible-near-infrared. The poly-Si/a-Si/4H-SiC heterojunction was achieved by magnetron sputtering and annealing. The fabricated heterojunction device has a low dark current of 1 pA at -40 V and a fast response time of 3 ns due to the outstanding rectification characteristics of the heterojunction combined with narrow bandgap and wide bandgap material. In addition, the carrier behavior of the heterojunction exposed to broadband light is analyzed in detail by constructing the energy band diagram.

引用

页数：8

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