Analysis and measurement of high frequency piezoelectric ring resonator

被引：1

作者：

Yang, Tingting ^{[1
]}

Cai, Yao ^{[1
,2
,3
]}

Gao, Chao ^{[1
]}

Xu, Qinwen ^{[1
]}

Zou, Yang ^{[1
]}

Liu, Yan ^{[1
,2
,3
]}

Liu, Wenjuan ^{[1
,2
,3
]}

Lei, Cheng ^{[1
]}

Sun, Chengliang ^{[1
,2
,3
]}

机构：

[1] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China

[2] Hubei Yangtze Memory Labs, Wuhan 430205, Peoples R China

[3] Wuhan Univ, Sch Microelect, Wuhan 430072, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 01期

基金：

中国国家自然科学基金;

关键词：

MEMS; resonators; piezoelectric; radio frequency (RF); ring resonator; DESIGN; FBAR; VIBRATIONS;

D O I：

10.35848/1882-0786/ad1003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper introduces a piezoelectric ring resonator, comprising a Mo-ScAlN-Mo sandwich structure and shaped into a ring with a hollow center. The vibrational modes of the resonator are elucidated through simulation and theoretical analysis, and the impact of diverse geometric parameters on the resonant frequency is explored. A HF resonator with a resonance frequency of 4.168 GHz has been fabricated. The electrical parameters of this resonator are extracted by fitting the Modified Butterworth-Van Dyke equivalent circuit model and the measured results. This work establishes a theoretical foundation for designing resonators with adjustable frequencies on a single wafer.

引用

页数：6

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