Repetitive High-Power Microwave Pulses Induced Failure on a GaAs HBT LNA

被引：3
|
作者：
Mao, Qidong [1 ]
Huang, Liyang [1 ]
Xiang, Zhongwu [1 ]
Meng, Jin [1 ]
机构：
[1] Naval Univ Engn, Natl Key Lab Sci & Technol Vessel Integrated Power, Wuhan 430000, Peoples R China
来源：
IEEE TRANSACTIONS ON PLASMA SCIENCE | 2023年 / 51卷 / 02期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Damage effect; heterojunction bipolar transistor (HBT); high-power microwave (HPM); pulse repetitive frequency; SILICON; AMPLIFIER; BREAKDOWN;
D O I：
10.1109/TPS.2023.3237850
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
This study aims at studying the damage effect of gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) low noise amplifier (LNA) with repetitive high-power microwave (HPM) pulses. The theoretical function for the thermal accumulation effect is derived, which depends on the pulsewidth, the pulse repetition frequency (PRF), and the input power. A simulation model is established to investigate the thermal accumulation effect of repetitive HPM pulses on the HBT. The electric field, current density, and temperature distributions in the HBT with repetitive HPM pulses are discussed first. The influence of the repetitive HPM pulse parameters on the thermal accumulation effect is studied by theoretical analyses and simulations. Results show that the thermal recovery time increases with the pulsewidth or the input power increases. In addition, it is concluded that the frequency does not affect the thermal recovery time. The simulation results agree with the theoretical results. Finally, the damage effect of repetitive HPM pulses is experimentally verified.
引用
收藏
页码：399 / 406
页数：8
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