Fixperiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

This study demonstrates comparisons of power to failure for SiGe-based low-noise amplifiers by injecting high power microwave (HPM) pulses. Two types of silicon germanium (SiGe) transistors were modeled, and their temperature distributions were simulated. The pulse thermal resistance, thermal capacitance, and breakdown temperature were calculated and determined. Results show that the power to failure of the two transistors depend on the number of slots, pulse thermal resistance, thermal capacitance, and breakdown temperature, although these transistors exhibit nearly similar structures. In addition, calculated and measured results show close correlations.