Total ionizing dose effects on ring-oscillators and SRAMs in a commercial 28 nm CMOS technology

被引：6

作者：

Borghello, G. ^{[1
]}

Bergamin, G. ^{[1
]}

Ceresa, D. ^{[1
]}

Pejasinovic, R. ^{[1
]}

Diaz, F. P. ^{[1
]}

Kloukinas, K. ^{[1
]}

Pulli, A. ^{[1
]}

Ripamonti, G. ^{[1
]}

Caratelli, A. ^{[1
]}

Andorno, M. ^{[1
]}

机构：

[1] CERN, CH-1211 Geneva 23, Switzerland

来源：

JOURNAL OF INSTRUMENTATION | 2023年 / 18卷 / 02期

关键词：

Radiation damage to electronic components; Radiation-hard electronics; Digital electronic circuits;

D O I：

10.1088/1748-0221/18/02/C02003

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A test chip with 368 ring-oscillators and 4 different SRAMs has been designed to study the effect of total ionizing dose on a commercial 28 nm CMOS technology. The chip has been exposed to 1 Grad(SiO2), followed by a week of annealing at T = 100 degrees C. The results will be compared to those obtained on single (i.e., isolated) devices in the same 28 nm process and on a similar chip in 65 nm CMOS technology. This test confirms the robustness of the 28 nm technology to ionizing radiation, enabling the development of ASICs capable of surviving in environments with hundreds of Mrad.

引用

页数：9

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