Solubility of Magnesium in Silicon

被引：0
|
作者：
Shuman, V. B. [1 ]
Lavrentiev, A. A. [1 ]
Yakovleva, A. A. [1 ]
Abrosimov, N. V. [2 ]
Lodygin, A. N. [1 ]
Portsel, L. M. [1 ]
Astrov, Yu. A. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] Leibniz Inst Kristallzuchtung IKZ, D-12489 Berlin, Germany
来源：
SEMICONDUCTORS | 2023年 / 57卷 / 10期
关键词：
silicon; doping; magnesium impurity; solubility; DIFFUSION; IMPURITY; CALCIUM;
D O I：
10.1134/S1063782623070175
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The solubility of impurity magnesium, which was introduced by diffusion in the temperature range of 1100-1300 degrees C in silicon, is studied by secondary-ion mass spectrometry. It is demonstrated that, with the electrically inactive impurity component taken into account, the maximum solubility of magnesium in silicon is 1-2 orders of magnitude lower (and the diffusion coefficient is higher) than the values reported earlier.
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页码：465 / 468
页数：4
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