Performance optimization of In(Ga)As quantum dot intermediate band solar cells

被引：9
|
作者：
Yang, Guiqiang [1 ,2 ]
Liu, Wen [1 ,2 ]
Bao, Yidi [1 ,2 ]
Chen, Xiaoling [1 ,2 ]
Ji, Chunxue [1 ,2 ]
Wei, Bo [1 ,3 ]
Yang, Fuhua [1 ,2 ]
Wang, Xiaodong [1 ,2 ,3 ,4 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
[4] Beijing Engn Res Ctr Semicond Micronano Integrated, Beijing 100083, Peoples R China
来源：
DISCOVER NANO | 2023年 / 18卷 / 01期
基金：
国家重点研发计划;
关键词：
In(Ga)As quantum dot; Intermediate band solar cell; Strain; Thermal excitation; Carrier lifetime; OPTICAL-PROPERTIES; VOLTAGE RECOVERY; EFFICIENCY; LAYER; ABSORPTION; DEVICES; STRAIN;
D O I：
10.1186/s11671-023-03839-z
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.
引用
收藏
页数：14
相关论文
共 50 条
  • [31] Elements of the design and analysis band solar of quantum-dot intermediate cells
    Marti, A.
    Antolin, E.
    Canovas, E.
    Lopez, N.
    Linares, P. G.
    Luque, A.
    Stanley, C. R.
    Farmer, C. D.
    THIN SOLID FILMS, 2008, 516 (20) : 6716 - 6722
  • [32] New Hamiltonian for a better understanding of the quantum dot intermediate band solar cells
    Luque, A.
    Marti, A.
    Antolin, E.
    Linares, P. G.
    Tobias, I.
    Ramiro, I.
    Hernandez, E.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (08) : 2095 - 2101
  • [33] Analysis of the efficiency of intermediate band solar cells based on quantum dot supercrystals
    Heshmati, S.
    Golmohammadi, S.
    Abedi, K.
    Taleb, H.
    QUANTUM ELECTRONICS, 2014, 44 (03) : 279 - 282
  • [34] Challenges to the concept of an intermediate band in InAs/GaAs quantum dot solar cells
    Li, Tian
    Bartolo, Robert E.
    Dagenais, Mario
    APPLIED PHYSICS LETTERS, 2013, 103 (14)
  • [35] Optimization in Wide-band-gap Quantum Dot Solar cells
    Dai, Yushuai
    Slocum, Michael A.
    Bittner, Zachary
    Hellstroem, Staffan
    Forbes, David V.
    Hubbard, Seth M.
    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 151 - 154
  • [36] Modelling of Intermediate Band Solar Cells: Quantum Dot or Impurity Band - The Effect of Inhomogeneous Broadening
    Rorison, Judy
    Wang, Joey
    2014 16TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), 2014,
  • [37] ENERGY BAND STRUCTURE AND ABSORPTION COEFFICIENTS IN THE QUANTUM-DOT INTERMEDIATE BAND SOLAR CELLS
    Hu, W. G.
    Inoue, T.
    Kojima, O.
    Kita, T.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 1808 - 1813
  • [38] Improved quantum dot stacking for intermediate band solar cells using strain compensation
    Simmonds, Paul J.
    Sun, Meng
    Laghumavarapu, Ramesh Babu
    Liang, Baolai
    Norman, Andrew G.
    Luo, Jun-Wei
    Huffaker, Diana L.
    NANOTECHNOLOGY, 2014, 25 (44)
  • [39] AN EQUIVALENT CIRCUIT MODEL PROPOSED FOR THE INTERMEDIATE BAND NANOSTRUCTURED QUANTUM DOT SOLAR CELLS
    Houshmand, Mohammad
    Zandi, Mohammad H.
    Dehkordi, Somayeh S.
    Perez, Mauricio D.
    Gorji, Nima E.
    MODERN PHYSICS LETTERS B, 2012, 26 (21):
  • [40] The investigation of InGaAs quantum dot growth peculiarities for GaAs intermediate band solar cells
    Salii, R. A.
    Mintairov, S. A.
    Mintairov, M. A.
    Nadtochiy, A. M.
    Shvarts, M. Z.
    Kalyuzhnyy, N. A.
    INTERNATIONAL CONFERENCE PHYSICA.SPB/2017, 2018, 1038
12345