Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

被引：4
|
作者：
Ilik, Sadik [1 ]
Yelten, Mustafa Berke [1 ]
机构：
[1] Istanbul Tech Univ, Dept Elect & Commun Engn, TR-34467 Istanbul, Turkiye
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2023年 / 23卷 / 01期
关键词：
Transistors; Integrated circuit modeling; Radio frequency; Leakage currents; Threshold voltage; Radiation effects; Degradation; Total ionizing dose; TID; ionizing radiation; common gate; common source; cascode; amplifier; analog circuits; RF PERFORMANCE; RADIATION; VOLTAGE;
D O I：
10.1109/TDMR.2022.3227766
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.
引用
收藏
页码：51 / 57
页数：7
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