Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

被引：4

作者：

Ilik, Sadik ^{[1
]}

Yelten, Mustafa Berke ^{[1
]}

机构：

[1] Istanbul Tech Univ, Dept Elect & Commun Engn, TR-34467 Istanbul, Turkiye

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2023年 / 23卷 / 01期

关键词：

Transistors; Integrated circuit modeling; Radio frequency; Leakage currents; Threshold voltage; Radiation effects; Degradation; Total ionizing dose; TID; ionizing radiation; common gate; common source; cascode; amplifier; analog circuits; RF PERFORMANCE; RADIATION; VOLTAGE;

D O I：

10.1109/TDMR.2022.3227766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

引用

页码：51 / 57

页数：7

共 50 条

[31] Total Ionizing Dose and Single-Event Effect Response of the AD524CDZ Instrumentation Amplifier
Chavez, Jaime Cardenas
Hiemstra, Dave
Cundar, Adriana Noguera
Johnson, Brayden
Baik, David
Chen, Li
ENERGIES, 2024, 17 (18)
[32] TOTAL IONIZING DOSE HARDNESS OF MICROWAVE ELECTRONICS
Kalashnikov, O. A.
Elesin, V. V.
Gromov, D., V
2014 24TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY (CRIMICO), 2014, : 862 - 863
[33] Total ionizing dose effects on flash memories
Nguyen, DN
Lee, CI
Johnston, AH
1998 IEEE RADIATION EFFECTS DATA WORKSHOP, 1998, : 100 - 103
[34] Radiation-Hardened Library Cell Template and its Total Ionizing Dose (TID) Delay Characterization in 65nm CMOS Process
Chang, Joseph S.
Chong, Kwen-Siong
Shu, Wei
Lin, Tong
Jiang, Jize
Lwin, Ne Kyaw Zwa
Kang, Yang
2014 IEEE 57TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2014, : 821 - 824
[35] Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor
Yan, Gangping
Bi, Jinshun
Xu, Gaobo
Xi, Kai
Li, Bo
Fan, Linjie
Yin, Huaxiang
IEEE ACCESS, 2020, 8 : 154898 - 154905
[36] Charge Yield and Total Ionizing Dose Measurements
Haran, Avner
Murat, Michael
Barak, Joseph
David, David
RADECS 2007: PROCEEDINGS OF THE 9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2007, : 274 - 279
[37] The Susceptibility of TaOx-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose
McLain, Michael L.
Hjalmarson, Harold P.
Sheridan, Tim J.
Mickel, Patrick R.
Hanson, Don
McDonald, Kyle
Hughart, David R.
Marine, Matthew J.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (06) : 2997 - 3004
[38] Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell
Alexandre Simionovski
Rafael G. Vaz
Odair L. Gonçalez
Gilson Wirth
Journal of Electronic Testing, 2015, 31 : 411 - 417
[39] Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel
Ren, Shufeng
Bhuiyan, Maruf A.
Wu, Heng
Jiang, Rong
Ni, Kai
Zhang, En Xia
Reed, Robert A.
Fleetwood, Daniel M.
Ye, Peide
Ma, T. P.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 176 - 180
[40] Impact of Bias Conditions on Total Ionizing Dose Effects of 60Coγ in SiGe HBT
Zhang, Jinxin
Guo, Qi
Guo, Hongxia
Lu, Wu
He, Chaohui
Wang, Xin
Li, Pei
Liu, Mohan
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 63 (02) : 1251 - 1258

← 1 2 3 4 5 →