Total Ionizing Dose (TID) Impact on Basic Amplifier Stages

被引：4

作者：

Ilik, Sadik ^{[1
]}

Yelten, Mustafa Berke ^{[1
]}

机构：

[1] Istanbul Tech Univ, Dept Elect & Commun Engn, TR-34467 Istanbul, Turkiye

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2023年 / 23卷 / 01期

关键词：

Transistors; Integrated circuit modeling; Radio frequency; Leakage currents; Threshold voltage; Radiation effects; Degradation; Total ionizing dose; TID; ionizing radiation; common gate; common source; cascode; amplifier; analog circuits; RF PERFORMANCE; RADIATION; VOLTAGE;

D O I：

10.1109/TDMR.2022.3227766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the impact of total ionizing dose (TID) on basic amplifier stages that are biased right above the device threshold voltages. Existing TID degradation-aware transistor models have been leveraged in circuit simulations. The simulation methodology is developed to account for operating currents comparable to TID-induced leakage currents. It is shown that depending on the TID level, a DC input voltage level can be found for which performance characteristics such as the voltage gain can be retained to be similar in pre- and post-irradiation conditions.

引用

页码：51 / 57

页数：7

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