Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?

被引：7

作者：

Seidel, Konrad ^{[1
]}

Lehninger, David ^{[1
]}

Mueller, Franz ^{[1
]}

Raffel, Yannick ^{[1
]}

Suenbuel, Ayse ^{[1
]}

Revello, Ricardo ^{[1
]}

Hoffmann, Raik ^{[1
]}

De, Sourav ^{[1
]}

Kaempfe, Thomas ^{[1
]}

Lederer, Maximilian ^{[1
]}

机构：

[1] Fraunhofer IPMS, D-01109 Dresden, Germany

来源：

2023 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW | 2023年

关键词：

ferroelectrics; non-volatile memory; FeFET; FeRAM;

D O I：

10.1109/IMW56887.2023.10145945

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper we discuss the current research status of ferroelectric memory solutions and reflect it with application requirements. In focus are mainly three promising emerging memory device technologies based on ferroelectric (FE) hafnium oxide: front-end of line (FEoL) implemented FeFET, and the two FE-capacitor based solutions FeRAM and 1T1C FeFET. These device technologies are discussed with respect to aspects like scaling opportunity, reliability, and maturity level, reflecting with current and future application requirements as well as conventional memory solutions.

引用

页码：93 / 96

页数：4

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