Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?

被引：7
|
作者：
Seidel, Konrad [1 ]
Lehninger, David [1 ]
Mueller, Franz [1 ]
Raffel, Yannick [1 ]
Suenbuel, Ayse [1 ]
Revello, Ricardo [1 ]
Hoffmann, Raik [1 ]
De, Sourav [1 ]
Kaempfe, Thomas [1 ]
Lederer, Maximilian [1 ]
机构：
[1] Fraunhofer IPMS, D-01109 Dresden, Germany
来源：
2023 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW | 2023年
关键词：
ferroelectrics; non-volatile memory; FeFET; FeRAM;
D O I：
10.1109/IMW56887.2023.10145945
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper we discuss the current research status of ferroelectric memory solutions and reflect it with application requirements. In focus are mainly three promising emerging memory device technologies based on ferroelectric (FE) hafnium oxide: front-end of line (FEoL) implemented FeFET, and the two FE-capacitor based solutions FeRAM and 1T1C FeFET. These device technologies are discussed with respect to aspects like scaling opportunity, reliability, and maturity level, reflecting with current and future application requirements as well as conventional memory solutions.
引用
收藏
页码：93 / 96
页数：4
相关论文
共 50 条
  • [21] Hafnium Oxide (HfO2) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
    Banerjee, Writam
    Kashir, Alireza
    Kamba, Stanislav
    SMALL, 2022, 18 (23)
  • [22] Ferroelectric Hafnium Oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
    Mueller, J.
    Boescke, T. S.
    Mueller, S.
    Yurchuk, E.
    Polakowski, P.
    Paul, J.
    Martin, D.
    Schenk, T.
    Khullar, K.
    Kersch, A.
    Weinreich, W.
    Riedel, S.
    Seidel, K.
    Kumar, A.
    Arruda, T. M.
    Kalinin, S. V.
    Schloesser, T.
    Boschke, R.
    van Bentum, R.
    Schroeder, U.
    Mikolajick, T.
    2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2013,
  • [23] Impedance Spectroscopy on Hafnium Oxide-Based Memristive Devices
    Marquardt, Richard
    Zahari, Finn
    Carstensen, Juergen
    Popkirov, George
    Gronenberg, Ole
    Kolhatkar, Gitanjali
    Kohlstedt, Hermann
    Ziegler, Martin
    ADVANCED ELECTRONIC MATERIALS, 2023, 9 (06)
  • [24] Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics
    Yuan, Peng
    Mao, Ge-Qi
    Cheng, Yan
    Xue, Kan-Hao
    Zheng, Yunzhe
    Yang, Yang
    Jiang, Pengfei
    Xu, Yannan
    Wang, Yuan
    Wang, Yuhao
    Ding, Yaxin
    Chen, Yuting
    Dang, Zhiwei
    Tai, Lu
    Gong, Tiancheng
    Luo, Qing
    Miao, Xiangshui
    Liu, Qi
    NANO RESEARCH, 2022, 15 (04) : 3667 - 3674
  • [25] Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics
    Peng Yuan
    Ge-Qi Mao
    Yan Cheng
    Kan-Hao Xue
    Yunzhe Zheng
    Yang Yang
    Pengfei Jiang
    Yannan Xu
    Yuan Wang
    Yuhao Wang
    Yaxin Ding
    Yuting Chen
    Zhiwei Dang
    Lu Tai
    Tiancheng Gong
    Qing Luo
    Xiangshui Miao
    Qi Liu
    Nano Research, 2022, 15 : 3667 - 3674
  • [26] Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures
    Tasneem, Nujhat
    Kashyap, Harshil
    Chae, Kisung
    Park, Chinsung
    Lee, Ping-che
    Lombardo, Sarah F.
    Afroze, Nashrah
    Tian, Mengkun
    Kumarasubramanian, Harish
    Hur, Jae
    Chen, Hang
    Chern, Winston
    Yu, Shimeng
    Bandaru, Prabhakar
    Ravichandran, Jayakanth
    Cho, Kyeongjae
    Kacher, Josh
    Kummel, Andrew C.
    Khan, Asif Islam
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (38) : 43897 - 43906
  • [27] The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories
    Raharnan, Sk. Ziaur
    Lin, Yu-De
    Lee, Heng-Yuan
    Chen, Yu-Sheng
    Chen, Pang-Shiu
    Chen, Wei-Su
    Hsu, Chien-Hua
    Tsai, Kan-Hsueh
    Tsai, Ming-Jinn
    Wang, Pei-Hua
    LANGMUIR, 2017, 33 (19) : 4654 - 4665
  • [28] Strontium Doped Hafnium Oxide Thin Films: Wide Process Window for Ferroelectric Memories
    Schenk, T.
    Mueller, S.
    Schroeder, U.
    Materlik, R.
    Kersch, A.
    Popovici, M.
    Adelmann, C.
    Van Elshocht, S.
    Mikolajick, T.
    2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2013, : 260 - 263
  • [29] Hafnium Oxide based CMOS compatible Ferroelectric Materials
    Schroeder, U.
    Martin, D.
    Mueller, J.
    Yurchuk, E.
    Mueller, S.
    Adelmann, C.
    Schloesser, T.
    van Bentum, R.
    Mikolajick, T.
    DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10, 2012, 50 (04): : 15 - 20
  • [30] Hafnium Oxide Based CMOS Compatible Ferroelectric Materials
    Schroeder, U.
    Mueller, S.
    Mueller, J.
    Yurchuk, E.
    Martin, D.
    Adelmann, C.
    Schloesser, T.
    van Bentum, R.
    Mikolajick, T.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (04) : N69 - N72
12345