Offset-Via Anti-fuse by Cu BEOL Process in Advanced CMOS Technologies

被引：1
|
作者：
Yeh, Li-Yu [1 ]
Lin, Chrong-Jung [1 ]
King, Ya-Chin [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Microelect Lab, Hsinchu, Taiwan
来源：
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT | 2023年
关键词：
D O I：
10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133946
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An offset-Via one-time programmable memory anti-fuse cell is proposed and implemented by FinFET CMOS logic process. By forming in thin dielectric layer in an offset-via structure, the cell can switch states under low programming current. Multilevel resistance states can be achieved by compliance current control. Excellent reliability and data stability of this new cell are also demonstrated.
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