Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors

被引：5

作者：

Kola, Sekhar Reddy ^{[1
,2
]}

Li, Yiming ^{[1
,2
,3
,4
,5
,6
,7
,8
]}

Chuang, Min-Hui ^{[1
,3
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Parallel & Sci Comp Lab, Hsinchu 300, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Elect Engn & Comp Sci Int Grad Program, Hsinchu 300, Taiwan

[3] Natl Yang Ming Chiao Tung Univ, Inst Commun Engn, Hsinchu 300, Taiwan

[4] Natl Yang Ming Chiao Tung Univ, Inst Biomed Engn, Hsinchu 300, Taiwan

[5] Natl Yang Ming Chiao Tung Univ, Inst Pioneer Semicond Innovat, Hsinchu 300, Taiwan

[6] Natl Yang Ming Chiao Tung Univ, Inst Artificial Intelligence Innovat, Hsinchu 300, Taiwan

[7] Natl Yang Ming Chiao Tung Univ, Dept Elect & Elect Engn, Hsinchu 300, Taiwan

[8] Natl Yang Ming Chiao Tung Univ, Ctr mmWave Smart Radar Syst & Technol, Hsinchu 300, Taiwan

来源：

2023 24TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, ISQED | 2023年

关键词：

Complementary filed-effect-transistors; gate-all-around; nanosheet; process variation effect; work function fluctuation; random dopant fluctuation; and statistical device simulation; CMOS; FABRICATION;

D O I：

10.1109/ISQED57927.2023.10129391

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (T-Nch/T-Pch), the channel width (W-ch), and the gate length (L-G) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

引用

页码：383 / 390

页数：8

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