A novel high-precision single-event transient hardened voltage comparator design

被引:1
|
作者
Xie, Yuqiao [1 ,2 ]
Liu, Zhongyang [1 ,2 ]
Xu, Tao [1 ,2 ]
Bi, Dawei [1 ]
Hu, Zhiyuan [1 ]
Zhang, Zhengxuan [1 ,3 ]
Zou, Shichang [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
关键词
analog; amplification; comparator; RHBD; sensitive node; SET; SNTDFL; ANALOG; SENSITIVITY; ION; CHARGE; LAYOUT; ICS;
D O I
10.1002/cta.3646
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To reduce the impact of the single-event transient (SET) effect on the high-precision comparator, based on the common high-gain pre-amplification stage structure of the comparator, a new radiation hardened by design (RHBD) method, namely, the sensitive node transient detection feedback latch (SNTDFL) technique, is proposed. The hardening technique avoids comparator erroneous output by detecting the sensitive nodes of the high-gain pre-amplification stage. The detection circuit receives the response generated by the high energy particle impacts and feeds the high level back to the sensitive nodes to latch the current comparator state. In this paper, a novel high-precision SET hardened voltage comparator based on this technique is developed. Through detailed circuit principle and simulation analysis, the functional characteristics and the hardening performance of the high-precision hardened comparator are verified. Compared with the unhardened and the TMR technique hardened comparator, the SNTDFL technique hardened comparator effectively avoids the erroneous output caused by the SET effect with less overhead and still has excellent functional characteristics.
引用
收藏
页码:4864 / 4878
页数:15
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