Fabrication of Junction Field-Effect Transistors on a Flexible Substrate by Using Hydrogenated Amorphous Silicon

被引：1

作者：

Lovecchio, Nicola ^{[1
]}

Caputo, Domenico ^{[1
]}

de Cesare, Giampiero ^{[1
]}

机构：

[1] Sapienza Univ Rome, Dept Informat Engn Elect & Telecommun, Rome, Italy

来源：

2023 9TH INTERNATIONAL WORKSHOP ON ADVANCES IN SENSORS AND INTERFACES, IWASI | 2023年

关键词：

flexible electronics; thin-film junction field effect transistors; amorphous silicon films; analogue electronics on flexible substrates; RECENT PROGRESS;

D O I：

10.1109/IWASI58316.2023.10164389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report on the fabrication and electrical characterization of junction field-effect transistors (JFETs) on flexible substrates for analogue electronics. The JFETs were realized using hydrogenated amorphous silicon (a-Si:H) as the semiconductor active material and a polyimide film as the flexible substrate. The devices were fabricated by using standard microelectronic technologies. The electrical characterization of the JFETs shows that the devices exhibit good performance in terms of output characteristics, making them suitable for the realization of low-power analog circuits.

引用

页码：277 / 280

页数：4

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