The Influence of B4C Film Density on Damage Threshold Based on Monte Carlo Method for X-ray Mirror

被引:0
|
作者
Sui, Tingting [1 ]
Zhuo, Haohui [1 ]
Tang, Anchun [1 ]
Ju, Xin [1 ]
机构
[1] Univ Sci & Technol Beijing, Sch Math & Phys, Dept Phys, Beijing 100083, Peoples R China
关键词
B4C film; density; XFEL; Monte Carlo; damage threshold; FREE-ELECTRON LASER; OPERATION; PHYSICS; PULSES;
D O I
10.3390/ma17051026
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The uniformity and consistency of X-ray mirror film materials prepared by experimental methods are difficult to guarantee completely. These factors directly affect the service life of free electron laser devices in addition to its own optical properties. Therefore, the quality of the film material, especially the density, has a critical effect on its application. Boron carbide film and monocrystalline silicon substrate were suitable examples to explore their influence of density on the damage threshold based on Monte Carlo and heat-conduction methods. Through simulation results, it was found that the change in film density could affect the energy deposition depth and damage threshold. When the film density was 2.48 g/cm(3), it had relatively high damage threshold in all energy ranges. And then the specific incident parameter for practical application was investigated. It was found that the damage mechanism of the B4C/Si was the melting of the interface. And the damage threshold was also higher with the film density of 2.48 g/cm(3). Therefore, it was recommended to maintain the density at this value as far as possible when preparing the film, and to ensure the uniformity and consistency of the film material.
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页数:13
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