Nonlocal transport of heat in equilibrium drift-diffusion systems

被引:1
|
作者
Stabler, Florian [1 ]
Sukhorukov, Eugene [1 ]
机构
[1] Univ Geneva, Dept Phys Theor, CH-1211 Geneva 4, Switzerland
关键词
Compendex;
D O I
10.1103/PhysRevB.107.045403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The amount of heat an integer quantum Hall edge state can carry in equilibrium is quantized in universal units of the heat flux quantum Jq = pi k2 12h over bar T 2 per edge state. We address the question of how heat transport B in realistic one-dimensional devices can differ from the usual chiral Luttinger liquid theory. We show that a local measurement can reveal a nonquantized amount of heat carried by the edge states, despite a globally equilibrium situation. More specifically, we report a heat enhancement effect in edge states interacting with Ohmic reservoirs in the presence of nonlocal interactions or chirality-breaking diffusive currents. In contrast to a nonequilibrium, nonlinear drag effect, we report an equilibrium, linear phenomenon. The chirality of the edge states creates additional correlations between the reservoirs, reflected in a higher-than-quantum heat flux in the chiral channel. We show that for different types of coupling the enhancement can be understood as static or dynamical back action of the reservoirs on the chiral channel. We show that our results qualitatively hold by replacing the dissipative Ohmic reservoirs by an energy-conserving mesoscopic capacitor and consider the respective transmission lines for different types of interaction.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Wigner-Poisson and nonlocal drift-diffusion model equations for semiconductor superlattices
    Bonilla, LL
    Escobedo, R
    MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2005, 15 (08): : 1253 - 1272
  • [22] Energy transport drift-diffusion model for submicrometer GaAs MESFETs
    Yamada, Y
    MICROELECTRONICS JOURNAL, 1997, 28 (05) : 561 - 569
  • [23] Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
    Mueller, M.
    Schroeter, M.
    Jungemann, C.
    Weimer, C.
    2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2021,
  • [24] Drift-diffusion equations and applications
    Allegretto, W
    MATHEMATICAL PROBLEMS IN SEMINCONDUCTOR PHYSICS, 2003, 1823 : 57 - 95
  • [25] The study of a drift-diffusion model
    Abouchabaka, J
    Aboulaïch, R
    Nachaoui, A
    Souissi, A
    ICM 2001: 13TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, 2001, : 54 - 58
  • [26] Drift-Diffusion MOSFET Modelling
    Bekaddour, A.
    Bouazza, B.
    Chabanne-Sari, N. E.
    AFRICAN REVIEW OF PHYSICS, 2008, 2 : 3 - 3
  • [27] The drift-diffusion equation revisited
    Assad, F
    Banoo, K
    Lundstrom, M
    SOLID-STATE ELECTRONICS, 1998, 42 (03) : 283 - 295
  • [28] Testing the drift-diffusion model
    Fudenberg, Drew
    Newey, Whitney
    Strack, Philipp
    Strzalecki, Tomasz
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2020, 117 (52) : 33141 - 33148
  • [29] Anatomy of the drift-diffusion relationship
    Bringuier, E
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1998, 77 (04): : 959 - 964
  • [30] Unified Compact Model Covering Drift-Diffusion to Ballistic Carrier Transport
    Khandelwal, Sourabh
    Agarwal, Harshit
    Kushwaha, Pragya
    Duarte, Juan Pablo
    Medury, Aditya
    Chauhan, Yogesh S.
    Salahuddin, Sayeef
    Hu, Chenming
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (02) : 134 - 137