Adaptable 40 nm GaN T-gate MMIC Processes for Millimeter-wave Applications

被引：3

作者：

Denninghoff, D. ^{[1
]}

Arkun, E. ^{[1
]}

Moon, J. -S. ^{[1
]}

Tran, H. ^{[1
]}

Corrion, A. ^{[1
]}

Siddiqi, G. ^{[1
]}

Fanning, D. ^{[1
]}

Fireman, M. ^{[1
]}

Tai, J. ^{[1
]}

Wong, J. ^{[1
]}

Grabar, B. ^{[1
]}

Dao, C. ^{[1
]}

Milosavljevic, I. ^{[1
]}

Tran, R. ^{[1
]}

Getter, A. ^{[1
]}

Clapper, A. ^{[1
]}

Dadafshar, S. ^{[1
]}

Georgieva, J. ^{[1
]}

Moyer, H. ^{[1
]}

Miller, N. ^{[2
]}

Elliott, M. ^{[2
]}

Gilbert, R. ^{[2
]}

机构：

[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

[2] Air Force Res Lab Sensors Directorate, Wright Patterson AFB, OH USA

来源：

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年

关键词：

Gallium nitride; high-electron-mobility transistor; millimeter wave; monolithic microwave integrated circuit; ALGAN/GAN HEMTS; GHZ;

D O I：

10.1109/BCICTS54660.2023.10310972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aggressively scaled gallium nitride (GaN) high-electron-mobility transistor (HEMT) technologies with 40 nm Tgate lengths and extremely scaled ohmic-regrowth source-drain lengths ranging from 1500 nm to 150 nm comprise the low-loss, high-performance active devices in advanced high-power and high-efficiency monolithic microwave integrated circuits (MMICs). This paper outlines the latest device, circuit, and foundry access of three commercially available 40 nm GaN T-gate MMIC processes for millimeter-wave applications.

引用

页码：118 / 123

页数：6

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