Adaptable 40 nm GaN T-gate MMIC Processes for Millimeter-wave Applications

被引：3

作者：

Denninghoff, D. ^{[1
]}

Arkun, E. ^{[1
]}

Moon, J. -S. ^{[1
]}

Tran, H. ^{[1
]}

Corrion, A. ^{[1
]}

Siddiqi, G. ^{[1
]}

Fanning, D. ^{[1
]}

Fireman, M. ^{[1
]}

Tai, J. ^{[1
]}

Wong, J. ^{[1
]}

Grabar, B. ^{[1
]}

Dao, C. ^{[1
]}

Milosavljevic, I. ^{[1
]}

Tran, R. ^{[1
]}

Getter, A. ^{[1
]}

Clapper, A. ^{[1
]}

Dadafshar, S. ^{[1
]}

Georgieva, J. ^{[1
]}

Moyer, H. ^{[1
]}

Miller, N. ^{[2
]}

Elliott, M. ^{[2
]}

Gilbert, R. ^{[2
]}

机构：

[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

[2] Air Force Res Lab Sensors Directorate, Wright Patterson AFB, OH USA

来源：

2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年

关键词：

Gallium nitride; high-electron-mobility transistor; millimeter wave; monolithic microwave integrated circuit; ALGAN/GAN HEMTS; GHZ;

D O I：

10.1109/BCICTS54660.2023.10310972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aggressively scaled gallium nitride (GaN) high-electron-mobility transistor (HEMT) technologies with 40 nm Tgate lengths and extremely scaled ohmic-regrowth source-drain lengths ranging from 1500 nm to 150 nm comprise the low-loss, high-performance active devices in advanced high-power and high-efficiency monolithic microwave integrated circuits (MMICs). This paper outlines the latest device, circuit, and foundry access of three commercially available 40 nm GaN T-gate MMIC processes for millimeter-wave applications.

引用

页码：118 / 123

页数：6

共 50 条

[21] A simple silicon compatible 40 nm electroplated copper T-gate process
Cao, Menglin
Li, Xu
Ferguson, Susan
Thorns, Stephen
MacIntyre, Douglas
Thayne, Lain
MICROELECTRONIC ENGINEERING, 2014, 121 : 153 - 155
[22] Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brueckner, Peter
Kiefer, R.
Haupt, C.
Leuther, A.
Mueller, S.
Quay, R.
Schwantuschke, D.
Mikulla, M.
Ambacher, O.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 903 - 906
[23] Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Dammann, M.
Baeumler, M.
Brueckner, P.
Kemmer, T.
Konstanzer, H.
Graff, A.
Simon-Najasek, M.
Quay, R.
MICROELECTRONICS RELIABILITY, 2018, 88-90 : 385 - 388
[24] Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication
Wang, Huan-Chung
Su, Huan-Fu
Luc, Quang-Ho
Lee, Ching-Ting
Hsu, Heng-Tung
Chang, Edward Yi
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (11) : S3106 - S3109
[25] Improved MMIC-to-Waveguide Integration Solution for Millimeter-wave/Terahertz Applications
Yuan, Bin
Wu, Peng
Yuan, Yang
Xie, Chunshuang
Yu, Zhongjun
2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT), 2022,
[26] 18-31 GHz GaN MMIC LNA Using a 0.1 um T-Gate HEMT Process
Tong, Xiaodong
Zhang, Shiyong
Zheng, Penghui
Xu, Jianxing
Shi, Xiangyang
2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018), 2018, : 500 - 503
[27] Wide-stopband Millimeter-wave BPF on GaN MMIC Using Asymmetric Feeding Structure
Xu, Jin Xu
Zhang, Xiu Yin
Liu, Xiao Feng
PIERS 2014 GUANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2014, : 2529 - 2532
[28] A 50nm MHEMT Millimeter-Wave MMIC LNA with Wideband Noise and Gain Performance
Smith, Phillip M.
Ashman, Michael
Xu, Dong
Yang, Xiaoping
Creamer, Carl
Chao, P. C.
Chu, Kanin
Duh, K. H.
Koh, Christopher
Schellenberg, James
2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,
[29] Wide-stopband Millimeter-wave Bandpass Filter Based on Discriminating Coupling on GaN MMIC
Lin, Jie Kai
Zhang, Xiu Yin
Guo, Qing Yi
Kao, Hsuan-Ling
PIERS 2014 GUANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2014, : 1339 - 1342
[30] RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures
Sarker, Biddut K.
Islam, Ahmad E.
Crespo, Antonio
Hughes, Gary
Sepelak, Nicholas P.
Walker, Dennis E., Jr.
Nishimura, Karen
Green, Andrew J.
IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE, NAECON 2024, 2024, : 219 - 221

← 1 2 3 4 5 →