Regulation of the Temperature Field and Evolution of the Melt Convection Field During InP Crystal Growth with the Vertical Gradient Freeze Method

被引:1
|
作者
Wang, Pei [1 ]
Li, Xiang [2 ]
Wang, Bowen [2 ]
Suo, Kainan [3 ]
Liu, Juncheng [2 ]
机构
[1] Tiangong Univ, Engn Teaching Practice Training Ctr, Tianjin 300387, Peoples R China
[2] Tiangong Univ, Sch Mat Sci & Engn, Tianjin 300387, Peoples R China
[3] China Elect Technol Grp Corp, Res Inst 46, Tianjin 300220, Peoples R China
基金
中国国家自然科学基金;
关键词
InP; crystal growth; heat transfer; vertical gradient freeze; numerical simulation; ENCAPSULATED CZOCHRALSKI GROWTH; VGF-GROWTH; NUMERICAL-SIMULATION; SINGLE-CRYSTALS; LEC-GROWTH; GAAS;
D O I
10.1007/s11664-023-10668-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The vertical gradient freeze (VGF) process needs to regulate the temperature field more accurately to ensure the successful seed crystal introduction and good crystal growth condition compared to the vertical Bridgman method, such as a suitable solid-liquid interface temperature gradient. This work presents a method for regulation of the temperature field via temperature control of six heaters during VGF growth of InP crystal with numerical simulation, and shows the involution for both the melt convection and the solid-liquid interface temperature gradient. Two of the six heaters were in the heating zone, two in the gradient zone, and the others in the cooling zone. Firstly, three temperature settings for the six heaters were selected through many trial calculations to ensure the success of seed crystal introduction. Secondly, their effects on the temperature field in the crucible and the convection in the melt were investigated. The results show that the axial temperature gradient in the melt increases with an increase in the heating zone temperature or a decrease in the cooling zone temperature, of which the maximum for each simulation experiment almost always appears at the solid-liquid interface and decreases continuously with the crystal growth process. Moreover, the maximum temperature gradient in the melt for all the simulations is well below 10 K/cm due to the shouldering stage 2, which cannot improve significantly even if the heating zone temperature increases and the cooling zone temperature decreases to room temperature. The temperature setting of the heaters has no significant influence on the convection pattern in the melt, which is nearly the same for all three settings. However, the maximum velocity of the convection field increases significantly with the axial temperature gradient increase. The number of convective vortices in the melt decreases from four at the initial seeding stage to one at the end of the equal-diameter growth for every simulation, but the maximum flow velocity decreases very slowly from the shouldering stage.
引用
收藏
页码:7346 / 7364
页数:19
相关论文
共 50 条
  • [31] Evolution of transport properties along a semi-insulating CdTe crystal grown by vertical gradient freeze method
    Suzuki, Kazuhiko
    Tanaka, Akikazu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (08): : 2479 - 2482
  • [32] Forced convection during liquid encapsulated crystal growth with an axial magnetic field
    Ma, N
    Walker, J
    Bliss, D
    Bryant, G
    JOURNAL OF FLUIDS ENGINEERING-TRANSACTIONS OF THE ASME, 1998, 120 (04): : 844 - 850
  • [33] Damping of solute convection during crystal growth by applying magnetic field gradients
    Wakayama, NI
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (24-27): : L833 - L835
  • [34] EFFECT OF A TEMPERATURE GRADIENT ON CHARACTER OF IMPURITY DISTRIBUTION DURING CRYSTAL-GROWTH FROM MELT
    KRIVANDINA, EA
    KOSTYLEV.EE
    KRISTALLOGRAFIYA, 1973, 18 (04): : 885 - 887
  • [35] Convection in a Y-Ba-Cu-O melt during crystal growth by Czochralski method
    Szmyd, JS
    Mika, G
    Suzuki, K
    ADVANCED COMPUTATIONAL METHODS IN HEAT TRANSFER V, 1998, : 223 - 232
  • [36] PECULIARITIES OF LIQUID-PHASE EPITAXY IN A TEMPERATURE-GRADIENT FIELD FROM A VERTICAL LAYER OF A SOLUTION IN A MELT
    BALYUK, AV
    POPOV, VP
    INORGANIC MATERIALS, 1986, 22 (02) : 165 - 169
  • [37] Flow and temperature field in molten silicon during Czochralski crystal growth in a cusp magnetic field
    Watanabe, M
    Eguchi, M
    Hibiya, T
    JOURNAL OF CRYSTAL GROWTH, 1998, 193 (03) : 402 - 412
  • [38] Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt
    Nefedov, Oleg
    Dovnarovich, Alexey
    Kostikov, Vladimir
    Mozhevitina, Elena
    Bocharnikov, Dmitry
    Avetissov, Igor
    CRYSTALS, 2024, 14 (01)
  • [39] Optimizing the temperature gradient for CdZnTe crystal growth using the vertical Bridgman-Stockbarger method
    Yan, Bing
    Liu, Weihua
    Yu, Chang
    Yu, Zhijie
    Shangguan, Minjie
    Yan, Jiakai
    Huang, Li
    JOURNAL OF CRYSTAL GROWTH, 2023, 621
  • [40] ORIENTATION OF A LIQUID-CRYSTAL EBBA DURING CRYSTALLIZATION IN THE TEMPERATURE-GRADIENT FIELD
    BIKCHANTAYEV, IG
    OVCHINNIKOV, IV
    KRISTALLOGRAFIYA, 1982, 27 (02): : 395 - 396