Regulation of the Temperature Field and Evolution of the Melt Convection Field During InP Crystal Growth with the Vertical Gradient Freeze Method

被引:1
|
作者
Wang, Pei [1 ]
Li, Xiang [2 ]
Wang, Bowen [2 ]
Suo, Kainan [3 ]
Liu, Juncheng [2 ]
机构
[1] Tiangong Univ, Engn Teaching Practice Training Ctr, Tianjin 300387, Peoples R China
[2] Tiangong Univ, Sch Mat Sci & Engn, Tianjin 300387, Peoples R China
[3] China Elect Technol Grp Corp, Res Inst 46, Tianjin 300220, Peoples R China
基金
中国国家自然科学基金;
关键词
InP; crystal growth; heat transfer; vertical gradient freeze; numerical simulation; ENCAPSULATED CZOCHRALSKI GROWTH; VGF-GROWTH; NUMERICAL-SIMULATION; SINGLE-CRYSTALS; LEC-GROWTH; GAAS;
D O I
10.1007/s11664-023-10668-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The vertical gradient freeze (VGF) process needs to regulate the temperature field more accurately to ensure the successful seed crystal introduction and good crystal growth condition compared to the vertical Bridgman method, such as a suitable solid-liquid interface temperature gradient. This work presents a method for regulation of the temperature field via temperature control of six heaters during VGF growth of InP crystal with numerical simulation, and shows the involution for both the melt convection and the solid-liquid interface temperature gradient. Two of the six heaters were in the heating zone, two in the gradient zone, and the others in the cooling zone. Firstly, three temperature settings for the six heaters were selected through many trial calculations to ensure the success of seed crystal introduction. Secondly, their effects on the temperature field in the crucible and the convection in the melt were investigated. The results show that the axial temperature gradient in the melt increases with an increase in the heating zone temperature or a decrease in the cooling zone temperature, of which the maximum for each simulation experiment almost always appears at the solid-liquid interface and decreases continuously with the crystal growth process. Moreover, the maximum temperature gradient in the melt for all the simulations is well below 10 K/cm due to the shouldering stage 2, which cannot improve significantly even if the heating zone temperature increases and the cooling zone temperature decreases to room temperature. The temperature setting of the heaters has no significant influence on the convection pattern in the melt, which is nearly the same for all three settings. However, the maximum velocity of the convection field increases significantly with the axial temperature gradient increase. The number of convective vortices in the melt decreases from four at the initial seeding stage to one at the end of the equal-diameter growth for every simulation, but the maximum flow velocity decreases very slowly from the shouldering stage.
引用
收藏
页码:7346 / 7364
页数:19
相关论文
共 50 条
  • [21] Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method
    Schwesig, P
    Sahr, U
    Friedrich, J
    Müller, G
    Köhler, A
    Kretzer, U
    Eichler, S
    Mühe, A
    2005 International Conference on Indium Phosphide and Related Materials, 2005, : 392 - 397
  • [22] Inertia and thermal convection during crystal growth with a steady magnetic field
    Ma, N
    Walker, JS
    JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER, 2001, 15 (01) : 50 - 54
  • [23] EVOLUTION OF TRANSPORT-PROPERTIES ALONG A SEMIINSULATING CDTE CRYSTAL GROWN BY VERTICAL GRADIENT FREEZE METHOD
    SUZUKI, K
    TANAKA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (08): : 2479 - 2482
  • [24] Effects of the Mushy Zone on the Temperature Field and the Flow Field During GaInSb Crystal Growth with the Traveling Heater Method
    Wang, Bowen
    Liu, Ming
    Xing, Weirong
    Nie, Lifang
    Kang, Chuangang
    Liu, Juncheng
    JOM, 2025, 77 (01) : 353 - 376
  • [25] Effect of Heat Flux on Solid-Liquid Interface Shape during GaAs Crystal Growth with Vertical Gradient Freeze Method
    Bian Y.
    Zheng A.
    Lin Q.
    Long B.
    Zhang T.
    Xiyou Jinshu/Chinese Journal of Rare Metals, 2019, 43 (10): : 1068 - 1074
  • [26] Study of melt convection and interface shape during sapphire crystal growth by Czochralski method
    Fang, Haisheng
    Tian, Jun
    Zhang, Quanjiang
    Pan, Yaoyu
    Wang, Sen
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2012, 55 (25-26) : 8003 - 8009
  • [27] Crystal growth of AgIn1-XGaXSe2 crystals grown by a vertical gradient freeze method
    Yoshino, K
    Komaki, H
    Itani, K
    Chichibu, SF
    Akaki, Y
    Ikari, T
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) : 257 - 260
  • [29] Damping of solute convection during crystal growth by applying magnetic field gradients
    Wakayama, Nobuko I.
    Japanese Journal of Applied Physics, Part 2: Letters, 2005, 44 (24-27):
  • [30] Forced Convection during Liquid Encapsulated Crystal Growth with an Axial Magnetic Field
    Dept. Mech. Aerosp. Eng. Eng. M., University of Missouri, Rolla, MO 65409, United States
    不详
    不详
    J Fluids Eng Trans ASME, 4 (844-850):