Carrier confinement and interband optical transitions in lead chalcogenide quantum wells, nanosheets, and nanoplatelets

被引:2
|
作者
Goupalov, Serguei V. [1 ,2 ]
机构
[1] Jackson State Univ, Dept Phys, Jackson, MS 39217 USA
[2] AF Ioffe Physico Tech Inst, 26 Polytech Skaya, St Petersburg 194021, Russia
关键词
PBS NANOSHEETS; HEIGHT;
D O I
10.1039/d2nr02942a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Analytic equation for energy dispersion of electronic states in lead chalcogenide nanosheets is derived within an effective mass model. Selection rules for interband optical transitions are analyzed and expressions for interband optical matrix elements are obtained. It is shown that the main effect of the lateral confinement in nanoplatelets can be accounted for in terms of the quantized in-plane wave vector.
引用
收藏
页码:1230 / 1235
页数:6
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