Interdiffused quantum wells for lateral carrier confinement in VCSEL's

被引：20

作者：

Naone, RL ^{[1
]}

Floyd, PD

Young, DB

Hegblom, ER

Strand, TA

Coldren, LA

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Xerox PARC, Palo Alto, CA 94302 USA

[3] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 04期

关键词：

quantum-well intermixing; semiconductor device fabrication; surface emitting lasers;

D O I：

10.1109/2944.720483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that it is necessary to eliminate carrier diffusion in the active region for viable vertical-cavity lasers (VCL's) with small dimensions, However, methods that work well in reducing lateral carrier leakage in narrow ridge-waveguide lasers such as silicon induced disordering may be problematic in VCL structures. Encouraging results from novel methods for impurity free intermixing for VCL applications are presented.

引用

页码：706 / 714

页数：9

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