Investigation of a Gate Stack Gate-All-Around Junctionless Nanowire Field-Effect Transistor for Oxygen Gas Sensing

被引:0
|
作者
Chaujar, Rishu [1 ]
Yirak, Mekonnen Getnet [1 ,2 ]
机构
[1] Delhi Technol Univ, Dept Appl Phys, New Delhi, Delhi, India
[2] Debre Tabor Univ, Dept Phys, Debre Tabor, Ethiopia
关键词
Junctionless; oxygen gas sensor; gate-all-around; gate stack; nanowire field-effect transistor; WORK FUNCTION; HIGH-K; SENSOR; PERFORMANCE; DIELECTRICS; MOSFET;
D O I
10.1007/s11664-024-10948-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The design and analysis of a gate stack gate-all-around junctionless nanowire field-effect transistor (GAA-JL-NWFET) with a catalytic metal as gate contact for oxygen gas sensing is presented in this study. An n-channel GAA-JL-NWFET design using gold (Au) as the gate metal electrode is employed for oxygen sensing by utilizing appropriate work function values, which interact with oxygen gas and change the device's electrical properties. This work focuses on changes in temperature (300-500 K) and Au metal gate work function (5.05-5.20 eV) to investigate the presence of oxygen molecules and their impact on the GAA-JL-NWFET gas sensor performance. Changes in the surface potential, threshold voltage, hole concentration, electron concentration, subthreshold voltage, electric field, and drain current using the ATLAS TCAD simulator are investigated for the adsorption of gas molecules to determine the electrical characteristics of the proposed device. Changes in threshold voltage (Vth), switching ratio, and subthreshold current sensitivity (SIOFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$S_{{I_{{{\text{OFF}}}} }}$$\end{document}) can be considered as sensitivity parameters for sensing oxygen gas molecules. The results reveal that as the Au work function shifts at the gate by 100 mV, the sensitivity (SIOFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$S_{{I_{{{\text{OFF}}}} }}$$\end{document}) enhancement using gate stack GAA-JL-NWFET-based oxygen gas sensors compared to GAA-MOSFET and conventional MOSFET are 15.13% and 88.31%, respectively. Based on our simulation results, the proposed device offers excellent sensitivity, low power consumption, and a fast response time, making it an appropriate candidate for oxygen gas sensing, including environmental monitoring, medical diagnosis, and industrial safety.
引用
收藏
页码:2191 / 2201
页数:11
相关论文
共 50 条
  • [41] Suspended InAsnanowire gate-all-around field-effect transistors
    Li, Qiang
    Huang, Shaoyun
    Pan, Dong
    Wang, Jingyun
    Zhao, Jianhua
    Xu, H. Q.
    APPLIED PHYSICS LETTERS, 2014, 105 (11)
  • [42] Electrostatic Discharge (ESD) Protection Challenges of Gate-All-Around Nanowire Field-Effect Transistors
    Liu, W.
    Liou, J. J.
    Singh, N.
    Lo, G. Q.
    Chung, J.
    Jeong, Y. H.
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 55 - 60
  • [43] Cross-sectional shape effects of gate-all-around nanowire field-effect transistors
    Wang, Hao
    Chang, Sheng
    He, Jin
    Huang, Qijun
    Wang, Gaofeng
    Journal of Computational and Theoretical Nanoscience, 2015, 12 (12) : 5171 - 5178
  • [44] Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
    Lee, Dong Seup
    Yang, Hong-Seon
    Kang, Kwon-Chil
    Lee, Joung-Eob
    Lee, Jung Han
    Cho, Seongjae
    Park, Byung-Gook
    IEICE TRANSACTIONS ON ELECTRONICS, 2010, E93C (05) : 540 - 545
  • [45] Junctionless Gate-all-around Nanowire FET with Asymmetric Spacer for Continued Scaling
    V. Bharath Sreenivasulu
    Vadthiya Narendar
    Silicon, 2022, 14 : 7461 - 7471
  • [46] Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect Transistor
    Kang, Seok Jung
    Park, Jeong-Uk
    Rim, KyungJin
    Kim, Yoon
    Kim, Jang Hyun
    Kim, Garam
    Kim, Sangwan
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, 20 (07) : 4409 - 4413
  • [47] Signature of electrothermal transport in 18 nm vertical junctionless gate-all-around nanowire field effect transistors
    Rezgui, Houssem
    Wang, Yifan
    Mukherjee, Chhandak
    Deng, Marina
    Maneux, Cristell
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2025, 58 (02)
  • [48] Trans-capacitance modeling in junctionless gate-all-around nanowire FETs
    Jazaeri, Farzan
    Barbut, Lucian
    Sallese, Jean-Michel
    SOLID-STATE ELECTRONICS, 2014, 96 : 34 - 37
  • [49] Junctionless Gate-all-around Nanowire FET with Asymmetric Spacer for Continued Scaling
    Sreenivasulu, V. Bharath
    Narendar, Vadthiya
    SILICON, 2022, 14 (13) : 7461 - 7471
  • [50] Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels
    Su, Chun-Jung
    Tsai, Tzu-I
    Liou, Yu-Ling
    Lin, Zer-Ming
    Lin, Horng-Chih
    Chao, Tien-Sheng
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (04) : 521 - 523