Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

被引:0
|
作者
赵立新 [1 ]
金智 [1 ]
刘新宇 [1 ]
机构
[1] Institute of Microelectronics,Chinese Academy of Sciences
关键词
large signal dynamic characteristics; InGaP HBT; waveform distortion;
D O I
暂无
中图分类号
TN322.8 [];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
In wireless mobile communications and wireless local area networks (WLAN),advanced InGaP HBT with power amplifiers are key components.In this paper,the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications.The microwave large signal waveform distortions at various input power levels,especially at large signal level,are investigated and the reasons are analyzed.The output power saturation is also explained.These analyses will be useful for power amplifier designs.
引用
收藏
页码:50 / 57
页数:8
相关论文
共 50 条
  • [41] Characterization of Volterra Kernels for RF Power Amplifiers Using a Two-Tone Signal and a Large-Signal
    Alizadeh, Mahmoud
    Ronnow, Daniel
    Handel, Peter
    2018 12TH INTERNATIONAL CONFERENCE ON COMMUNICATIONS (COMM), 2018, : 351 - 356
  • [42] Nonlinear Characterization of Microwave Power Amplifiers with Supply Modulation
    Gibiino, Gian Piero
    Avolio, Gustavo
    Schreurs, Dominique
    Santarellii, Alberto
    2014 INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC), 2014,
  • [43] SiGe HBT large-signal modelling and its application to the design of millimetre wave amplifiers
    Arcioni, F
    Pascual, JP
    Fernández, T
    Zamanillo, JM
    Mediavilla, A
    Artal, E
    Filimon, V
    Luy, JF
    1998 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS: DIGEST OF PAPERS, 1998, : 105 - 112
  • [44] Analysis of nonlinear large signal intrinsic elements for InGaP/GaAs HBT based on Gummel-Poon model
    Hu, Shanwen
    Xu, Kaikai
    Yu, Shu
    Wang, Zixuan
    Zhou, Bo
    Guo, Yufeng
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2020, 33 (03)
  • [45] MICROWAVE TUNNEL-DIODE AMPLIFIERS WITH LARGE DYNAMIC RANGE
    STEINHOFF, R
    STERZER, F
    RCA REVIEW, 1964, 25 (01): : 54 - 66
  • [46] Order-of-magnitude improvement in microwave power capacity of InGaP/GaAs HBT under isothermal pulsed operation
    Halder, Subrata
    Hwang, James C. M.
    Solomon, George A.
    Klein, Gerald
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (10) : 2634 - 2639
  • [47] Application of Floquet Theory to the Large Signal Stability Analysis of Microwave Amplifiers
    Traversa, Fabio L.
    Bonani, Fabrizio
    Cappelluti, Federica
    2013 IEEE 14TH ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON), 2013,
  • [48] Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model
    Snowden, CM
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (01) : 58 - 71
  • [49] A Novel Wiener-Type Dynamic Neural Network Method for Large Signal Modeling of Power Amplifiers
    Liu, Wenyuan
    Su, Yi
    Wang, Shilin
    Zhang, Wei
    Yan, Shuxia
    Feng, Feng
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2024,
  • [50] GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
    Park, JW
    Mohammadi, S
    Pavlidis, D
    Dua, C
    Guyaux, JL
    Garcia, JC
    1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, 1998, : 179 - 182