Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers

被引：0
|
作者：
赵立新 [1 ]
金智 [1 ]
刘新宇 [1 ]
机构：
[1] Institute of Microelectronics,Chinese Academy of Sciences
来源：
半导体学报 | 2009年 / 30卷 / 12期
关键词：
large signal dynamic characteristics; InGaP HBT; waveform distortion;
D O I：
暂无
中图分类号：
TN322.8 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
In wireless mobile communications and wireless local area networks (WLAN),advanced InGaP HBT with power amplifiers are key components.In this paper,the microwave large signal dynamic waveform characteristics of an advanced InGaP HBT are investigated experimentally for 5.8 GHz power amplifier applications.The microwave large signal waveform distortions at various input power levels,especially at large signal level,are investigated and the reasons are analyzed.The output power saturation is also explained.These analyses will be useful for power amplifier designs.
引用
收藏
页码：50 / 57
页数：8
相关论文
共 50 条
  • [21] Large- and small-signal IMD behavior of microwave power amplifiers
    de Carvalho, NB
    Pedro, JC
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (12) : 2364 - 2374
  • [22] Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for wireless applications
    Jäger, H
    Grebennikov, A
    Heaney, E
    Weigel, R
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2003, 13 (06) : 496 - 510
  • [23] An Efficient Thermal-Removal Design of GaAs/InGaAs/InGaP HBT-Based Power Amplifiers
    Horng, Y. X.
    Hsu, M. Y.
    Tseng, H. C.
    2014 IEEE PES ASIA-PACIFIC POWER AND ENERGY ENGINEERING CONFERENCE (IEEE PES APPEEC), 2014,
  • [24] Nonlinear Behavioral Modeling of W-CDMA InGaP HBT Power Amplifiers for Predicting Spectral Regrowth
    Kim, Dohyung
    Kim, Jaekwon
    Burm, Jinwook
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (04) : 2165 - 2170
  • [25] An InGaP/GaAs merged HBT-FET (BiFET) technology and applications to the design of handset power amplifiers
    Metzger, A. G.
    Zampardi, P. J.
    Sun, M.
    Li, J.
    Cismaru, C.
    Rushing, L.
    Ramanathan, R.
    Weller, K.
    IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006, 2006, : 175 - 178
  • [26] An InGaP/GaAs merged HBT-FET (BiFET) technology and applications to the design of handset power amplifiers
    Metzger, Andre G.
    Ramanathan, Ravi
    Li, Jiang
    Sun, Hsiang-Chih
    Cismaru, Cristian
    Shao, Hongxiao
    Rushing, Lance
    Weller, Kenneth P.
    Wei, Ce-Jun
    Zhu, Yu
    Klimashov, Alexei
    Tkachenko, Yevgeniy A.
    Li, Bin
    Zampardi, Peter J.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (10) : 2137 - 2148
  • [27] Large-Signal Hybrid Compact/Behavioral HBT Model for III-V Technology Power Amplifiers
    Nielsen, Troels S.
    Nedeljkovic, Sonja
    Halchin, Dave
    2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 482 - 485
  • [28] Waveform characterization and modeling of dynamic charge behavior of InGaP-GaAsHBTs
    Wei, CJ
    Sprinkle, S
    Hu, JT
    Chung, HC
    Mitchell, B
    Dicarlo, P
    Bartle, D
    2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 675 - 678
  • [29] Characterization Techniques for Stability and Noise in Microwave Amplifiers under Large-Signal Excitations
    Collantes, Juan-Mari
    Portilla, Joaquin
    Anakabe, Aitziber
    Otegi, Nerea
    2016 IEEE MTT-S LATIN AMERICA MICROWAVE CONFERENCE (LAMC), 2016,
  • [30] Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers
    Oakley, Michael A.
    Raghunathan, Uppili S.
    Wier, Brian R.
    Chakraborty, Partha Sarathi
    Cressler, John D.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (05) : 1383 - 1389
12345