Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

The selection of solvents for SiC nanowires（NWs） in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity, isopropanol（IPA） is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2μm;,4μm;,6μm;,which corresponds to SiC NW concentrations of 0.1μg/μL,0.3μg/μL and 0.5μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6μm;.The mobility of a typical device is estimated to be 13.4cm;/（V·s）.